参数资料
| 型号： | DG2016DQ-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 10MSOP |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 2 x SPDT - NC/NO |
| 导通状态电阻： | 4 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 10nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 带卷 (TR) |
www.vishay.com
2
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
Vishay Siliconix
DG2016, DG2026
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
MSOP-10c
320
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
Room
Full
34.8
5.3
RON Flatness
RON
Flatness
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
1.6
Switch Off
Leakage Currentf
INO(off)
INC(off)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On
Leakage Currentf
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltaged
VINH
Full
1.6
V
Input Low Voltage
VINL
Full
0.4
Input Capacitance
Cin
Full
5
pF
Input Current
IINL or IINH
VIN = 0 V or V+
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2 V, RL = 50 , CL = 35 pF
Room
Full
28
53
59
ns
Turn-Off Time
tOFF
Room
Full
13
38
Break-Before-Make Time
td
Full
1
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
38
pC
Off-Isolationd
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 78
dB
Crosstalkd
XTALK
Room
- 82
NO, NC Off Capacitance
d
CNO(off)
VIN = 0 V or V+, f = 1 MHz
Room
15
pF
CNC(off)
Room
15
Channel-On Capacitanced
CNO(on)
Room
49
CNC(on)
Room
45
Power Supply
Power Supply Current
I+
VIN = 0 V or V+
Full
0.01
1
A
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