参数资料
型号: DG211B
厂商: Vishay Intertechnology,Inc.
英文描述: Improved Quad CMOS Analog Switches(四单刀单掷CMOS模拟开关)
中文描述: 改进的四CMOS模拟开关(四单刀单掷的CMOS模拟开关)
文件页数: 4/8页
文件大小: 61K
代理商: DG211B
DG211B/212B
Vishay Siliconix
www.vishay.com
4
Document Number: 70040
S-00788
Rev. H, 24-Apr-00
Test Conditions
Unless Otherwise Specified
D Suffix
40 to 85 C
Parameter
Symbol
V+ = 12 V, V
= 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
12
V
Drain-Source On-Resistance
r
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Room
Full
90
160
200
Dynamic Characteristics
Turn-On Time
t
ON
V
= 8 V
See Figure 2
Room
300
Turn-Off Time
t
OFF
Room
200
ns
Charge Injection
Q
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
Room
4
pC
Power Supply
Positive Supply Current
I+
Room
Full
10
50
Negative Supply Current
I
V
IN
= 0 or 5 V
Room
Full
10
50
A
Logic Supply Current
I
L
Room
Full
10
50
Power Supply Range for
Continuous Operation
V
OP
Full
4.5
25
V
Notes:
a.
b.
c.
d.
e.
Room = 25 C, Full = as determined by the operating temperature suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Guaranteed by design, not subject to production test.
V
IN
= input voltage to perform proper function.
85 C
20
16
12
8
4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
15
10
5
0
5
10
15
5 V
r
DS(on)
vs. V
D
and Power Supply Voltages
V
D
Drain Voltage (V)
10 V
15 V
20 V
r
DS(on)
vs. V
D
and Temperature
V
D
Drain Voltage (V)
125 C
25 C
55 C
V+ = 15 V
V
=
15 V
30
20
10
60
70
80
90
100
r
)
r
)
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