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参数资料
| 型号： | DG2511DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL LV 6MINIQFN |
| 标准包装： | 6,000 |
| 功能： | 开关 |
| 电路： | 1 x SPDT - NC/NO |
| 导通状态电阻： | 1.3 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 10nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN |
| 供应商设备封装： | 6-迷你型QFN |
| 包装： | 带卷 (TR) |
www.vishay.com
2
Document Number: 74454
S12-1989–Rev. D, 20-Aug-12
Vishay Siliconix
DG2511, DG2512, DG2513
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: analogswitchtechsuoort@vishay.com
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC, COM pins)
± 150
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature
D Suffix
- 65 to 150
°C
Power Dissipation (Packages)b
miniQFN-6c
160
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,VIN = 0.4 V or 2 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 2.7 V, VCOM = 0.5 V/1.5 V
INO, INC = 100 mA
Room
Full
1.4
1.7
1.9
RON Match
R
ON
Room
0.15
RON Flatness
RON
Flatness
Room
0.3
0.4
Switch Off Leakage Currentf
INO(off)
INC(off)
V+ = 3.3 V,
VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V
Room
Full
- 2
- 20
2
20
nA
ICOM(off)
Room
Full
- 2
- 20
2
20
Channel-On Leakage Currentf
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Full
- 2
- 20
2
20
Digital Control
Input High Voltage
VINH
Full
1.6
V
Input Low Voltage
VINL
Full
0.4
Input Capacitance
Cin
Full
4
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
V+ = 2.7 V, VNO or VNC = 1.5 V,
RL = 50 , CL = 35 pF
Room
Full
18
43
49
ns
Turn-Off Time
tOFF
Room
Full
732
34
Break-Before-Make Time
tBBM
Room
1
12
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
3
pC
Off-Isolationd
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 58
dB
Crosstalkd
XTALK
Room
- 64
NO, NC Off Capacitance
d
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
Room
21
pF
Channel-On Capacitanced
CON
Room
61
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
VIN = 0 or V+
0.01
1
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DG2512 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low-Voltage, Low rON, Single Analog Switch In miniQFN-6 Package |
| DG2512DN-T1-E4 | 功能描述:模拟开关 IC Low Volt Single SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG2513 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low-Voltage, Low rON, Single Analog Switch In miniQFN-6 Package |
| DG2513DN-T1-E4 | 功能描述:模拟开关 IC Low Volt Single SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG2515 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Sw |
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