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| 型号： | DG2517DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 10DFN |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 2 x SPDT - NC/NO |
| 导通状态电阻： | 4 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 10nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
3
Vishay Siliconix
DG2517, DG2518
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
34.0
4.3
Ω
RON Flatness
RON
Flatness
V+ = 4.2 V, VCOM = 1, 2, 3.5 V
INO/NC = 10 mA
Room
Full
1.1
1.4
1.6
RON Match Between Channels
ΔR
ON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
Switch Off Leakage Current
INO(off),
INC(off)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V, VCOM = VNO, VNC = 1 V/4.5 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltaged
VINH
Full
2.0
V
Input Low Voltage
VINL
Full
0.8
Input Capacitance
Cin
Full
4
pF
Input Current
IINL or IINH
VIN = 0 V or V+
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
V+ = 4.2 V, VNO or VNC = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
12
25
45
ns
Turn-Off Time
tOFF
Room
Full
820
30
Break-Before-Make Time
td
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Full
1
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 2.5 V, RGEN = 0 Ω
Room
2
pC
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Room
242
MHz
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 71
dB
f = 10 MHz
Room
- 51
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 73
f = 10 MHz
Room
- 55
Source-Off Capacitanced
CNO(off)
VIN = 0 or V+, f = 1 MHz
Room
8
pF
CNC(off)
Room
8
Channel-On Capacitanced
CNO(on)
Room
35
CNC(on)
Room
35
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
VIN = 0 or V+
Full
0.01
1.0
A
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