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参数资料
| 型号： | DG2518 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 3ohm, High Bandwidth, Dual SPDT Analog Switch |
| 中文描述： | 3ohm，高带宽，双路SPDT模拟开关 |
| 文件页数： | 3/7页 |
| 文件大小： | 627K |
| 代理商： | DG2518 |
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
www.vishay.com
3
Vishay Siliconix
DG2517/DG2518
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.0 V
e
Temp
a
Limits
- 40 to 85 °C
Typ
c
Unit
Min
b
Max
b
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 4.2 V, V
COM
= 3.5 V, I
NO/NC
= 10 mA
Room
Full
3
4.0
4.3
Ω
r
ON
Flatness
r
ON
Flatness
V+ = 4.2 V, V
COM
= 1, 2, 3.5 V
I
NO/NC
= 10 mA
Room
Full
1.1
1.4
1.6
r
ON
Match Between Channels
Δ
r
ON
V+ = 4.2 V, V
COM
= 3.5 V, I
NO/NC
= 10 mA
Room
Full
0.1
0.3
0.4
Switch Off Leakage Current
I
NO(off),
I
NC(off)
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
Room
Full
- 1
- 10
1
10
nA
I
COM(off)
Room
Full
Room
Full
- 1
- 10
- 1
- 10
1
10
1
10
Channel-On Leakage Current
I
COM(on)
V+ = 5.5 V, V
COM
= V
NO
, V
NC
= 1 V/4.5 V
Digital Control
Input High Voltage
d
Input Low Voltage
V
INH
V
INL
C
in
Full
2.0
V
Full
0.8
Input Capacitance
Full
4
pF
Input Current
Dynamic Characteristics
I
INL
or I
INH
V
IN
= 0 V or V+
Full
1
1
μA
Turn-On Time
t
ON
V+ = 4.2 V, V
NO
or V
NC
= 3 V
R
L
= 300
Ω
, C
L
= 35 pF
Room
Full
Room
Full
Full
12
25
45
20
30
ns
Turn-Off Time
t
OFF
8
Break-Before-Make Time
Charge Injection
d
- 3 dB Bandwidth
t
d
V
NO
or V
NC
= 3 V, R
L
= 300
Ω
, C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 2.5 V, R
GEN
= 0
Ω
0 dBm, C
L
= 5 pF, R
L
= 50
Ω
1
Q
INJ
BW
Room
2
pC
Room
Room
Room
Room
Room
Room
157
- 67
- 47
- 67
- 47
8
MHz
Off-Isolation
d
OIRR
R
L
= 50
Ω
, C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
dB
Crosstalk
d
X
TALK
R
L
= 50
Ω
, C
L
= 5 pF
Source-Off Capacitance
d
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V
IN
= 0 or V+, f = 1 MHz
pF
Room
8
Channel-On Capacitance
d
Room
35
Room
35
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
5.5
1.0
V
μA
V
IN
= 0 or V+
Full
0.01
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