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参数资料
| 型号： | DG2518DN-T1-E4 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 3ohm, High Bandwidth, Dual SPDT Analog Switch |
| 中文描述： | 3ohm，高带宽，双路SPDT模拟开关 |
| 文件页数： | 2/7页 |
| 文件大小： | 627K |
| 代理商： | DG2518DN-T1-E4 |
www.vishay.com
2
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
Vishay Siliconix
DG2517/DG2518
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference to GND
V+
IN, COM, NC, NO
a
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Limit
Unit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
- 65 to 150
320
1191
V
mA
°C
Power Dissipation (Packages)
b
MSOP-10
c
DFN-10
d
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Range
d
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp
a
Limits
- 40 to 85 °C
Typ
c
Unit
Min
b
Max
b
V
NO
, V
NC
,
COM
r
ON
r
Flatness
Full
0
V+
V
On-Resistance
V+ = 2.7 V, V
= 1.5 V
I
NO/NC
= 10 mA
V+ = 2.7 V, V
= 1.5, 2 V
I
NO/NC
= 10 mA
V+ = 2.7 V, V
= 1.5 V
I
NO/NC
= 10 mA
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
3.2
4.5
5.0
1.4
16
0.3
0.4
1
10
1
10
1
10
Ω
r
ON
Flatness
1.0
r
ON
Match Between Channels
Δ
r
ON
I
NO(off),
I
NC(off)
I
COM(off)
0.1
Switch Off Leakage Current
f
V+ = 3.6 V, V
NO
, V
NC
= 0.3 V/ 3 V
V
COM
- 1
- 10
- 1
- 10
- 1
- 10
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 3.6 V, V
NO,
V
NC
= V
COM
= 0.3 V/3 V
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V
INH
V
INL
C
in
Full
Full
Full
Full
1.4
V
0.5
4
pF
μA
I
INL
or I
INH
1
1
Turn-On Time
t
ON
V+ = 2.7 V, V
NO
or V
NC
= 1.5 V
R
L
= 300
Ω
, C
L
= 35 pF
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
15
30
50
25
35
ns
Turn-Off Time
t
OFF
10
Break-Before-Make Time
Charge Injection
d
- 3 dB Bandwidth
t
d
V
NO
or V
NC
= 1.5 V, R
L
= 300
Ω
, C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0
Ω
0 dBm, C
L
= 5 pF, R
L
= 50
Ω
1
Q
INJ
BW
1
pC
MHz
157
- 67
- 47
- 67
- 47
8
8
35
35
Off-Isolation
d
OIRR
R
L
= 50
Ω
, C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
dB
Crosstalk
d
X
TALK
R
L
= 50
Ω
, C
L
= 5 pF
N
O
, N
C
Off Capacitance
d
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V
IN
= 0 or V+, f = 1 MHz
pF
Channel-On Capacitance
d
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
μA
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