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参数资料
| 型号： | DG2535DQ-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH LV DUAL SPST 10MSOP |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 2 x SPDT |
| 导通状态电阻： | 500 毫欧 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 3.6 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 带卷 (TR) |
www.vishay.com
2
Document Number: 72939
S-71009-Rev. E, 14-May-07
Vishay Siliconix
DG2535/DG2536
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Referenced V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC, COM)
± 300
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 500
Storage Temperature (D Suffix)
- 65 to 150
°C
ESD per Method 3015.7
> 2
kV
Power Dissipation (Packages)b
MSOP-10c
320
mW
DFN-10d
1191
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 V
e
Tempa
Limits
- 40 to 85 °C
Unit
Minb
Typc
Maxb
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
On-Resistance
rON
V+ = 2.7 V, VCOM = 0.6 V/1.5 V, INO, INC = 100 mA
Room
Full
0.35
0.5
0.6
Ω
rON Flatness
d
rON
Flatness
Room
0.09
0.2
On-Resistance
Match Between Channelsd
Δr
DS(on)
Room
0.05
Switch Off
Leakage Current
INO(off)
INC(off)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On
Leakage Current
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltaged
VINH
Full
1.4
V
Input Low Voltage
VINL
Full
0.5
Input Capacitance
Cin
Full
10
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
1
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DG2536 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:0.35 OHM Low-Voltage Dual SPDT Analog Switch |
| DG2536DN-T1-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:0.35 OHM Low-Voltage Dual SPDT Analog Switch |
| DG2536DN-T1-E4 | 功能描述:模拟开关 IC Low Volt Dual SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG2536DQ-T1-E3 | 功能描述:模拟开关 IC Low Volt Dual SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG2537 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:4ohm Dual SPST Switches |
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