参数资料
| 型号： | DG2706DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPDT 16-MINIQFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 4 x SPDT |
| 导通状态电阻： | 5.5 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.65 V ~ 4.3 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WQFN，16-迷你型QFN |
| 供应商设备封装： | 16-迷你型QFN（1.8x2.6） |
| 包装： | 标准包装 |
| 其它名称： | DG2706DN-T1-E4DKR |
Document Number: 68392
S11-0176-Rev. B, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
DG2706
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3.15 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Temp.b
Limits
- 40 °C to 85 °C
Unit
Min.d
Typ.c
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
0
V+
V
On-Resistance
RDS(on)
V+ = 3.15 V, INO/NC = 10 mA, VCOM = 1.0 V
Room
3
5.5
Full
6
RON Match
R
(ON)
V+ = 3.15 V, INO/NC = 10 mA, VCOM = 1.0 V
Room
0.3
RON Resistance Flatness
RON
V+ = 3.15 V, INO/NC = 10 mA,
Room
0.6
Channel Off Leakage
Current
INO/NC(off)
V+ = 3.6 V, VNO/NC = 0.5 V/3 V,
VCOM = 3 V/0.5 V
Room
- 5
5
nA
Full
- 10
10
ICOM(off)
Room
- 5
5
Full
- 10
10
Channel-On Leakage
Current
ICOM(on)
V+ = 3.6 V, VNO/NC, VCOM = 3 V/0.5 V
Room
- 10
10
Full
- 20
20
Digital Control
Input High Voltage
VINH
Full
1.65
V
Input Low Voltage
VINL
Full
0.4
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Break-Before-Make Time
tBBM
VNO, VNC = 1.5 V, RL = 50 , CL = 35 pF
Room
1
ns
Full
5
Enable Turn-On Time
tON(EN)
Room
20
45
Full
55
Enable Turn-Off Time
tOFF(EN)
Room
15
35
Full
45
Charge Injectiond
QINJ
CL = 1 nF, RGEN = 0 , VNC/NO = 2 V
Room
3
pC
Off-Isolationd
OIRR
V+ = 3.15 V, f = 1 MHz, RL = 50 , CL = 5 pF
Room
- 70
dB
Crosstalkd, f
XTALK
Room
- 90
Bandwidthd
BW
V+ = 3.15 V, RL = 50 , CL = 5 pF, - 3 dB
Room
190
MHz
Total Harmonic Distortiond
THD
V+ = 3.15 V, RLOAD = 600
Room
0.02
%
NO, NC Off Capacitance
d
CSNC(off)
V+ = 3.15 V, f = 1 MHz
Room
16
pF
CSNO(on)
15
Channel-On Capacitanced
CCOM(on)
31
Power Supply
Power Supply Range
V+
1.65
4.3
V
Power Supply Current
I+
VIN = 0 or V+
Full
1
A
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