参数资料
型号: DG2711DL-T1-E3
厂商: Vishay Intertechnology,Inc.
英文描述: Low-Voltage, Sub-Ohm, SPDT Analog Switch
中文描述: 低电压,分欧姆,SPDT模拟开关
文件页数: 2/8页
文件大小: 136K
代理商: DG2711DL-T1-E3
DG2711
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73200
S-42089—Rev. A, 15-Nov-04
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC and COM Pins)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +4 V
-0.3 to (V+ + 0.3 V)
200 mA
300 mA
. . . . . . . . . . . . . . . .
-65 to 150
°
C
Power Dissipation (Packages)
b
6-Pin SO70
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 mW
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 3.1 mW/ C above 70 C
b.
c.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 1.8 V,
10%, V
IN
= 0.4 or 1.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 0.9 V, I
NO
, I
NC
= 100 mA
Room
Full
0.8
2.0
2.5
Switch Off Leakage Current
f
I
NO(off),
I
NC(off)
V+ = 2.2 V
Room
Full
d
1
10
1
10
I
COM(off)
V
NO,
V
NC
= 0.2 V/2.0 V, V
COM
= 2.0 V/0.2 V
Room
Full
d
1
10
1
10
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.2 V, V
NO,
V
NC
= V
COM
= 0.2 V/2.0 V
Room
Full
d
1
10
1
10
Digital Control
Input High Voltage
V
INH
Full
1.0
V
Input Low Voltage
V
INL
Full
0.4
Input Capacitance
d
C
in
Full
5
pF
Input Current
f
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
A
Dynamic Characteristics
Turn-On Time
d
t
ON
V
NO
or V
NC
= 1.5 V, R
= 35 pF
Figures 1 and 2
V
1 5 V R = 300 , C 35 F
Room
Full
d
36
60
62
Turn-Off Time
d
t
OFF
Room
Full
d
22
42
44
ns
Break-Before-Make Time
d
t
d
Room
3
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 , Figure 3
Room
20
pC
Off-Isolation
d
OIRR
R
L
= 50 , C
= 5 pF, f = 1 MHz
L
= 5 pF f = 1 MHz
Room
56
dB
Crosstalk
d
X
TALK
Room
56
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
73
pF
Channel-On Capacitance
d
C
ON
Room
167
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