参数资料
型号: DG271BCJ-E3
厂商: Vishay Intertechnology,Inc.
英文描述: High-Speed Quad Monolithic SPST CMOS Analog Switch
中文描述: 高速四单片SPST CMOS模拟开关
文件页数: 2/4页
文件大小: 55K
代理商: DG271BCJ-E3
DG271B
Vishay Siliconix
www.vishay.com
2
Document Number: 70966
S-42137—Rev. B, 15-Nov-04
ABSOLUTE MAXIMUM RATINGS
V+ to V
GND to V
Digital Inputs
a
V
S
, V
D
44 V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
(V
)
2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
Storage Temperature
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . .
(DY Suffix)
. . . . . . . . . . . . . . . . . . .
(CJ Suffix)
. . . . . . . . . . . . . . . . . . .
65 to 150 C
65 to 125 C
Power Dissipation (Package)b
16-Pin Plastic DIP
c
16-Pin Plastic Narrow SOIC
d
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V
will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6.5 mW/ C above 75 C
d.
Derate 7.6 mW/ C above 75 C
470 mW
600 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Test Conditions
Unless Specified
V 15 V V 15 V
V+ = 15 V, V
=
V
IN
= 2.4 V, 0.8 V
f
C, D Suffix
0 to 70 C
40 to 85 C
Typ
c
Parameter
Symbol
Temp
b
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
15
15
V
Drain-Source On-Resistance
r
DS(on)
I
S
= 1 mA, V
D
=
10 V
Room
Full
Room
Full
Room
Full
Room
Full
32
50
75
1
20
1
20
1
20
Switch Off Leakage Current
I
S(off)
V
D
=
14 V V
14 V, V
S
=
14 V
1
20
1
20
1
20
0.05
I
D(off)
0.05
nA
Channel On Leakage Current
I
D(on)
+
S(on)
V
S
= V
D
=
14 V
0.05
Digital Control
Input Current with Voltage High
I
INH
V
IN
= 2 V
V
IN
= 15 V
V
IN
= 0 V
Full
1
0.010
1
Full
Full
1
1
0.010
0.010
1
1
A
Input Current with Voltage Low
Dynamic Characteristics
I
INL
Turn-On Time
t
ON
V
=
See Figure 3
10 V
Room
Full
Room
Full
55
65
80
65
80
ns
Turn-Off Time
t
OFF
50
Charge Injection
Q
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
= 0
See Figure 3
Room
5
pC
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
C
S(off)
C
D(off)
C
D
(
on)
OIRR
V
S
= 0 V, V
= 5 V
f = 1 MHz
Room
Room
Room
8
8
30
pF
V
D
= V
S
= 0 V, V
IN
= 0 V
C
L
= 10 pF, R
= 1 k
f = 100 kHz
See Figures 4 and 5
Off Isolation
Room
85
dB
Crosstalk
X
TALK
Room
100
Supply
Positive Supply Current
I+
All Channels On or Off
V
IN
= 5 V or 0 V
Room
Full
Room
Full
5.5
7.5
9
mA
Negative Supply Current
I
6
8
3.4
Notes:
a.
b.
c.
d.
e.
f.
Refer to PROCESS OPTION FLOWCHART.
Room = 25 C, Full = as determined by the operating temperature suffix.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guaranteed by design, not subject to production test.
V
IN
= input voltage to perform proper function.
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