参数资料
型号: DG2741
厂商: Vishay Intertechnology,Inc.
英文描述: Low-Voltage, 0.8-ohm rON, Dual SPST Analog Switch
中文描述: 低电压,0.8欧姆Ron的双SPST模拟开关
文件页数: 3/7页
文件大小: 102K
代理商: DG2741
DG2741/2742/2743
Vishay Siliconix
New Product
Document Number: 72708
S-32617—Rev. A, 29-Dec-03
www.vishay.com
3
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC and COM Pins)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
ESD per Method 3015.7
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +4 V
-0.3 to (V+ + 0.3 V)
200 mA
300 mA
. . . . . . . . . . . . . . . .
2 kV
Storage Temperature (D Suffix)
Power Dissipation (Packages)
c
6-Pin SC-70
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-65 to 150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 mW
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 3.1 mW/ C above 70 C
b.
c.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 1.8 V,
10%, V
IN
= 0.4 or 1.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 0.9 V
I
NO
, I
NC
= 10 mA
Room
Full
d
0.9
2.5
4.0
r
ON
Flatness
d
r
Flatness
V+ = 1.8 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.25
r
ON
Match
d
r
ON
Room
0.05
Switch Off Leakage Current
f
I
NO(off),
I
NC(off)
V+ = 1.8 V
Room
Full
d
1
10
1
10
I
COM(off)
V
NO,
V
NC
= 0.2 V/2.0 V, V
COM
= 1.5 V/0.3 V
Room
Full
d
1
10
1
10
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 1.8 V, V
NO,
V
NC
= V
COM
= 0.3 V/1.5 V
Room
Full
d
1
10
1
10
Digital Control
Input High Voltage
V
INH
Full
1.0
V
Input Low Voltage
V
INL
Full
0.4
Input Capacitance
d
C
in
Full
5.5
pF
Input Current
f
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
A
Dynamic Characteristics
Turn-On Time
d
t
ON
V
NO
or V
NC
= 1.5 V, R
= 35 pF
Figures 1 and 2
V
1 5 V R = 50 , C 35 F
Room
Full
d
33
45
50
Turn-Off Time
d
t
OFF
Room
Full
d
27
40
45
ns
Break-Before-Make Time
d
t
d
Room
3
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 , Figure 3
Room
20
pC
Off-Isolation
d
OIRR
R
L
= 1 k , C
= 5 pF, f = 1 MHz
L
= 5 pF f = 1 MHz
Room
55
dB
Crosstalk
d
X
TALK
Room
91
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
88
pF
Channel-On Capacitance
d
C
ON
Room
105
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