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参数资料
| 型号： | DG2750DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH LV DUAL SPST 10MINIQFN |
| 标准包装： | 3,000 |
| 功能： | 开关 |
| 电路： | 2 x SPDT - NC/NO |
| 导通状态电阻： | 1 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5 V |
| 电流 - 电源： | 2µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-UFQFN |
| 供应商设备封装： | 10-迷你型QFN（1.4x1.8） |
| 包装： | 带卷 (TR) |
Document Number: 64736
S10-0650-Rev. C, 22-Mar-10
www.vishay.com
3
Vishay Siliconix
DG2750
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Dynamic Characteristics
Charge Injectiond
QINJ
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
Room
4pC
Off-Isolationd
OIRR
V+ = 3.0 V, RL = 50 Ω, CL = 5 pF,
f = 300 kHz
- 54.7
dB
Crosstalkd
XTALK
- 60.8
Bandwidthd
BW
V+ = 3.0 V, RL = 50 Ω, - 3 dB
34
MHz
Channel-Off Capacitanced
CNC/NO(off)
V+ = 3.0 V, f = 1 MHz
30
pF
Channel-On Capacitanced
CCOM/NC/NO(on)
81
Power Supply
Power Supply Range
V+
1.8
5.0
V
Power Supply Current
I+
VIN = 0 V, or V+
Full
2
A
SPECIFICATIONS V+ = 2.7 V, ± 10 %
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
On-Resistance vs. VD and Single Supply Voltage
R
O
N
-
On-Resistance
(
Ω
)
V
D - Analog Voltage (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
- 3
- 2
- 1
0
1
2
3
4
5
T = 25 °C
IS = 100 mA
V+ = 1.6 V
V+ = 2.0 V
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.6 V
V+ = 4.3 V
On-Resistance vs. Analog Voltage
and Temperature
R
O
N
-
On-Resistance
(
Ω
)
V
D - Analog Voltage (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
- 3
- 2
- 1
0
1
2
- 40 °C
+ 25 °C
+ 85 °C
V+ = 1.6 V
ION = 100 mA
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