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| 型号： | DG2799DN-T1-E3 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 0.25-OHM CMOS, 1.65-V to 4.3-V, Dual DPDT Analog Switch |
| 中文描述： | 0.25欧姆的CMOS，1.65 V至4.3 - V的双DPDT模拟开关 |
| 文件页数： | 2/8页 |
| 文件大小： | 86K |
| 代理商： | DG2799DN-T1-E3 |
DG2799
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72922
S-41957—Rev. B, 25-Oct-04
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (Any terminal except NO, NC or COM)
Continuous Current (NO, NC, or COM)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . .
Package Solder Reflow Conditions
d
16-Pin QFN (3 x 3 mm)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +5.0 V
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
30 mA
300 mA
500 mA
-65 to 150
°
C
250
°
C
Power Dissipation (Packages)
b
QFN-16
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1385 mW
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 17.3 mW/ C above 70 C
Manual soldering with iron is not recommended for leadless components.
The QFN is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufactur-
ing. A solder fillet at the exposed copper lip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
b.
c.
d.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 1.8 V, V
IN
= 0.4 or 1.1 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 0.2 V/0.9 V, I
NO
, I
NC
= 100 mA
Room
Full
0.47
1.3
1.4
Digital Control
Input High Voltage
V
INH
V
INL
Full
1.1
V
Input Low Voltage
Full
0.4
Input Capacitance
C
in
Full
6
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
A
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
62
94
97
Turn-Off Time
t
OFF
V
NO
or V
NC
= 1.5 V, R
L
= 50 , C
L
= 35 pF
Room
Full
24
52
55
ns
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
t
d
Full
8
Q
INJ
OIRR
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room
66
pC
R
L
= 50 , C
= 5 pF, f = 100 kHz
L
= 5 pF f = 100 kHz
Room
74
dB
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
Room
74
N
O
, N
C
Off Capacitance
d
Room
108
= 0 or V+ f = 1 MHz
V
IN
= 0 or V+, f = 1 MHz
Room
108
pF
Channel On Capacitance
Channel-On Capacitance
d
Room
240
Room
240
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
A
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