参数资料
| 型号： | DG3157DL-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC DECODER/DEMUX HS 2:1 SC70-6 |
| 标准包装： | 3,000 |
| 功能： | 开关 |
| 电路： | 1 x SPDT |
| 导通状态电阻： | 15 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.65 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
www.vishay.com
2
Document Number: 72648
S09-0294-Rev. D, 23-Feb-09
Vishay Siliconix
DG3157
Notes:
a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
S, A, Ba
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature
D Suffix
- 65 to 150
°C
Power Dissipation (Packages)b
6-Pin SC-70c
250
mW
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3.0 V, VS = 0.25 V to 0.7 V+
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
DC Characteristics
High Level Input Voltage
VSH
V+ = 1.65 to 1.95 V
Full
0.75 V+
V
V+ = 2.3 to 5.5 V
Full
0.7 V+
Low Level Input Voltage
VSL
V+ = 1.65 to 1.95 V
Full
0.25 V+
V+ = 2.3 to 5.5 V
Full
0.3 V+
On Resistance
RON
V+ = 4.5 V
VBN = 0 V, IA = 30 mA
Full
6
7
Ω
VBN = 2.3 V, IA = - 30 mA
Full
6
12
VBN = 4.5 V, IA = - 30 mA
Full
9
15
V+ = 3.0 V
VBN = 0 V, IA = 24 mA
Full
8
9
VBN = 3.0 V, IA = - 24 mA
Full
12
20
V+ = 2.3 V
VBN = 0 V, IA = 8 mA
Full
9
12
VBN = 2.3 V, IA = - 8 mA
Full
13
30
V+ = 1.65 V
VBN = 0 V, IA = 4 mA
Full
12
20
VBN = 1.8 V, IA = - 4 mA
Full
18
50
On Resistance Flatness
RFLAT
0 < VBN < V+
V+ = 4.5 V, IA = - 30 mA
Room
6
V+ = 3.0 V, IA = - 24 mA
Room
12
V+ = 2.3 V, IA = - 8 mA
Room
22
V+ = 1.65 V, IA = - 4 mA
Room
90
On Resistance Matching
Between Channels
ΔR
ON
V+ = 4.5 V, VBN = 3.15 V, IA = - 30 mA
Room
0.32
V+ = 3.0 V, VBN = 2.1 V, IA = - 24 mA
Room
0.31
V+ = 2.3 V, VBN = 1.6 V, IA = - 8 mA
Room
0.30
V+ = 1.65 V, VBN = 1.15 V, IA = - 4 mA
Room
0.29
Input Leakage Current
IS
V+ = 5.5 V, VA = 5.5 V
Room
Full
- 0.1
- 1.0
0.1
- 1.0
A
Off Stage Switch Leakage
IBN(off)
V+ = 5.5 V, VA/VB = 0 V/5.5 V
Room
Full
- 0.1
- 1.0
0.1
- 1.0
On State Switch Leakage
IBN(on)
V+ = 5.5 V, VA/VB = 0 V/5.5 V
Room
Full
- 0.1
- 1.0
0.1
- 1.0
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