参数资料
型号: DG413DY-E3
厂商: Vishay Siliconix
文件页数: 9/14页
文件大小: 0K
描述: IC SWITCH QUAD SPST 16-SOIC
标准包装: 500
功能: 开关
电路: 4 x SPST - NC/NO
导通状态电阻: 80 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 5 V ~ 44 V,±5 V ~ 20 V
电流 - 电源: 1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
www.vishay.com
4
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONSa (for Unipolar Supplies)
Parameter
Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
12
V
Drain-Source
On-Resistance
RDS(on)
V + = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Room
Full
40
80
100
80
100
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = 8 V, see figure 2
Room
Hot
175
250
400
250
315
ns
Turn-Off Time
tOFF
Room
Hot
95
125
140
125
140
Break-Before-Make
Time Delay
tD
DG413 only, VS = 8 V
RL = 300 , CL = 35 pF
Room
25
Charge Injection
Q
Vg = 6 V, Rg = 0 , CL = 10 nF
Room
25
pC
Power Supplies
Positive Supply Current
I+
V + = 13.5 V, VIN = 0 V or 5 V
Room
Hot
0.0001
1
5
1
5
A
Negative Supply Current
I-
Room
Hot
- 0.0001
- 1
- 5
- 1
- 5
Logic Supply Current
IL
Room
Hot
0.0001
1
5
1
5
Ground Current
IGND
Room
Hot
- 0.0001
- 1
- 5
On-Resistance vs. VD and Power Supply Voltage
VD - Drain V oltage (V)
- 20
- 15
- 10
- 5
0
5
10
15
20
45
40
35
30
25
20
15
10
5
0
50
R
DS(on)
-
Dr
ain-So
u
rce
On-Resistance
)
TA = 25 °C
± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
On-Resistance vs. VD and Unipolar Supply Voltage
0
2
4
6
8
1012
14161820
0
50
100
150
200
250
300
V
VL = 5 V
V+ = 3 V
VL = 3 V
8 V
V+ = 5 V
12 V
15 V
20 V
VD - Drain Voltage (V)
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