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| 型号： | DG413HSDY-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 9/15页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPST 16-SOIC |
| 标准包装： | 500 |
| 功能： | 开关 |
| 电路： | 4 x SPST - NC/NO |
| 导通状态电阻： | 80 欧姆 |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
Vishay Siliconix
DG411HS, DG412HS, DG413HS
Document Number: 72053
S13-1283-Rev. D, 27-May-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 23.5 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V+ to V-
44
V
GND to V-
25
VL
(GND - 0.3) to (V+) + 0.3
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any terminal)
30
mA
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
100
Storage Temperature
(AK, AZ Suffix)
- 65 to 150
°C
(DJ, DY, DN Suffix)
- 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc
470
mW
16-Pin Narrow SOICd
600
16-Pin CerDIPe
900
LCC-20e
900
16-Pin (4 x 4 mm) QFNf
1880
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 15
15
- 15
15
V
Drain-Source
On-Resistance
RDS(on)
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Room
Full
25
35
45
35
45
Switch Off
Leakage Current
IS(off)
V+ = 16.5 V, V- = - 16.5 V
VD = ± 15.5 mA, VS = ± 15.5 V
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
nA
ID(off)
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
Channel On
Leakage Current
ID(on)
V+ = 16.5 V, V- = - 16.5 V
VD = VS = ± 15.5 V
Room
Full
± 0.1
- 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
Digital Control
Input Current, VIN Low
IIL
VIN under test = 0.8 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
A
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Input Capacitancee
CIN
f = 1 MHz
Room
5
pF
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = ± 10 V, see figure 2
Room
Full
68
105
127
105
116
ns
Turn-Off Time
tOFF
Room
Full
42
80
94
80
90
Break-Before-Make
Time Delay
tD
DG413HS only, VS = 10 V
RL = 300 , CL = 35 pF
Room
20
Charge Injectione
QVg = 0 V, Rg = 0 , CL = 10 nF
Room
22
pC
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