参数资料
| 型号： | DG418DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC ANALOG SWITCH CMOS 8SOIC |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 1 x SPST - NO |
| 导通状态电阻： | 40 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 12V，±15V |
| 电流 - 电源： | 1nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
www.vishay.com
10
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
Vishay Siliconix
DG417, DG418, DG419
APPLICATIONS
Micropower UPS Transfer Switch
When VCC drops to 3.3 V, the DG417 changes states,
closing SW1 and connecting the backup cell, as shown in
Figure 10. D1 prevents current from leaking back towards the
rest of the circuit. Current consumption by the CMOS analog
switch is around 100 pA; this ensures that most of the power
available is applied to the memory, where it is really needed.
In the stand-by mode, hundreds of A are sufficient to retain
memory data.
When the 5 V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
Programmable Gain Amplifier
The DG419, as shown in figure 11, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by RDS(on) variation as a function
of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in figure 12 may be used as a GaAs
FET driver. It translates a TTL control signal into - 8 V, 0 V
level outputs to drive the gate.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70051.
Figure 11. Micropower UPS Circuit
GND
IN
D
V-
3 V Li Cell
Memory
DG417
(5 V)
V+
S
+
–
SW1
VL
VSENSE
R1
453 k
D1
VCC
R2
383 k
Figure 12. Programmable Gain Amplifier
DG419
+
-
IN
R1
R2
VIN
VOUT
D
S1
S2
Figure 13. GaAs FET Driver
DG419
5 V
VOUT
D
V-
GND
S2
S1
VL
V+
+ 5 V
- 8 V
GaAs FET
相关PDF资料 |
PDF描述 |
|---|---|
| DG418LDY-E3 | IC ANALOG SWITCH CMOS 8SOIC |
| DG418LEUA+ | IC SWITCH SPST 8UMAX |
| DG419DY | IC SWITCH SPDT 8SOIC |
| DG423DY+T | IC SWITCH DUAL SPDT 16SOIC |
| DG428DJ-E3 | IC MUX ANLG 8CH W/LATCH 18DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DG418L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Precision Monolithic Low-Voltage CMOS Analog Switches |
| DG418LAK | 制造商:Vishay Siliconix 功能描述:ANLG SW SGL SPST 6V/12V 8CDIP - Bulk 制造商:Vishay Siliconix 功能描述:IC ANALOG SWITCH CMOS 8DIP |
| DG418LAK/883 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Precision Monolithic Low-Voltage CMOS Analog Switches |
| DG418LDJ | 功能描述:模拟开关 IC RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG418LDJ+ | 功能描述:模拟开关 IC SPST Precision CMOS Normally Open RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
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