参数资料
| 型号： | DG428DJ-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC MUX ANLG 8CH W/LATCH 18DIP |
| 标准包装： | 400 |
| 功能： | 多路复用器 |
| 电路： | 1 x 8:1 |
| 导通状态电阻： | 150 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 12V，±15V |
| 电流 - 电源： | 20µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 18-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 18-PDIP |
| 包装： | 管件 |
www.vishay.com
4
Document Number: 70063
S11-1350–Rev. K, 04-Jul-11
Vishay Siliconix
DG428, DG429
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 15
15
- 15
15
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, VAL = 0.8 V
IS = - 1 mA, VAH = 2.4 V
Room
Full
55
100
125
100
125
Greatest Change in RDS(on)
Between Channelsg
R
DS(on)
- 10 V < VS < 10 V
IS = - 1 mA
Room
5
%
Source Off Leakage Current
IS(off)
VS = ± 10 V,
VEN = 0 V, VD = ± 10 V
Room
Full
± 0.03
- 0.5
- 50
0.5
50
- 0.5
- 50
0.5
50
nA
Drain Off Leakage Current
ID(off)
VEN = 0 V
VD = ± 10 V
VS = ± 10 V
DG428
Room
Full
± 0.07
- 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05
- 1
- 50
1
50
- 1
- 50
1
50
Drain On Leakage Current
ID(on)
VS = VD = ± 10 V
VEN = 2.4 V
VAL= 0.8 V
VAH = 2.4 V
DG428
Room
Full
± 0.07
- 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05
- 1
- 50
1
50
- 1
- 50
1
50
Digital Control
Logic Input Current
Input Voltage High
IAH
VA = 2.4 V
Full
0.01
1
A
VA = 15 V
Full
0.01
1
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Full
- 0.01
- 1
Logic Input Capacitance
Cin
f = 1 MHz
Room
8
pF
Dynamic Characteristics
Transition Time
tTRANS
See Figure 5
Room
Full
150
250
300
250
300
ns
Break-Before-Make Interval
tOPEN
See Figure 4
Full
30
10
Enable and Write Turn-On Time
tON(EN,WR)
See Figure 6 and 7
Room
Full
90
150
225
150
225
Enable and Reset Turn-Off Time
tOFF(EN,RS)
See Figure 6 and 8
Room
Full
55
150
300
150
300
Charge Injection
Q
VGEN = 0 V, RGEN = 0
CL = 1 nF, See Figure 9
Room
1
pC
Off Isolation
OIRR
VEN = 0 V, RL = 300
CL = 15 pF, VS = 7 VRMS
f = 100 kHz
Room
- 75
dB
Source Off Capacitance
CS(off)
VS = 0 V, VEN = 0 V, f = 1 MHz
Room
11
pF
Drain Off Capacitance
CD(off)
VD = 0 V
VEN = 0 V
f = 1 MHz
DG428
Room
40
DG429
Room
20
Drain On Capacitance
CD(on)
DG428
Room
54
DG429
Room
34
Minimum Input Timing Requirements
Write Pulse Width
tW
See Figure 2
Full
100
ns
AX, EN Data Set Up time
tS
Full
100
AX, EN Data Hold Time
tH
Full
10
Reset Pulse Width
tRS
VS = 5 V, See Figure 3
Full
100
Power Supplies
Positive Supply Current
I+
VEN = VA = 0, RS = 5 V
Room
20
100
A
Negative Supply Current
I-
Room
- 0.001
- 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DG428DN | 功能描述:多路器开关 IC Single 8:1 Latch Multiplexer/MUX RoHS:否 制造商:Texas Instruments 通道数量:1 开关数量:4 开启电阻（最大值）:7 Ohms 开启时间（最大值）: 关闭时间（最大值）: 传播延迟时间:0.25 ns 工作电源电压:2.3 V to 3.6 V 工作电源电流: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UQFN-16 |
| DG428DN-E3 | 功能描述:多路器开关 IC Single 8:1 Latch Multiplexer/MUX RoHS:否 制造商:Texas Instruments 通道数量:1 开关数量:4 开启电阻（最大值）:7 Ohms 开启时间（最大值）: 关闭时间（最大值）: 传播延迟时间:0.25 ns 工作电源电压:2.3 V to 3.6 V 工作电源电流: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UQFN-16 |
| DG428DN-T1 | 制造商:Vishay Intertechnologies 功能描述: |
| DG429 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:2 CHANNEL DRIVERS WITH SPST AND DPST FET SWITCHES |
| DG429A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:2 CHANNEL DRIVERS WITH SPST AND DPST FET SWITCHES |
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