参数资料
| 型号： | DG442BDJ-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPST 16DIP |
| 标准包装： | 500 |
| 功能： | 开关 |
| 电路： | 4 x SPST - NO |
| 导通状态电阻： | 90 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 12V，±15V |
| 电流 - 电源： | 5µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
www.vishay.com
4
Document Number: 72625
S13-1284-Rev. C, 27-May-13
Vishay Siliconix
DG441B, DG442B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHEMATIC DIAGRAM (typical channel)
SPECIFICATIONS (for single supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 V
e
Temp.b
Limits
- 40 °C to 85 °C
Unit
Min.d
Typ.c
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
V
Drain-Source
On-Resistance
RDS(on)
IS = 1 mA, VD = 3 V, 8 V
Room
Full
90
160
200
Dynamic Characteristics
Turn-On Time
tON
RL = 1 k, CL = 35 pF, VS = 8 V
See Figure 2
Room
120
300
ns
Turn-Off Time
tOFF
Room
60
200
Charge Injection
Q
CL = 1 nF, Vgen = 6 V, Rgen = 0
Room
4
pC
Power Supplies
Positive Supply Current
I+
VIN = 0 V or 5 V
Room
Full
1
5
A
Negative Supply Current
I-
Room
Full
- 1
- 5
Figure 1.
INX
5 V Reg
Level
Shift/
Drive
V+
GND
V-
V+
相关PDF资料 |
PDF描述 |
|---|---|
| DG442DJ | IC SWITCH QUAD SPST 16DIP |
| DG442DY-T | IC SWITCH QUAD SPST 16SOIC |
| DG442LDY-E3 | IC SWITCH QUAD SPST 16SOIC |
| DG445DY-T | IC SWITCH QUAD SPST 16SOIC |
| DG445DY | IC SWITCH QUAD SPST 16SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DG442BDN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Improved Quad SPST CMOS Analog Switches |
| DG442BDN-T1-E4 | 功能描述:模拟开关 IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG442BDY | 功能描述:模拟开关 IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG442BDY-E3 | 功能描述:模拟开关 IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG442BDY-T1 | 功能描述:模拟开关 IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
发布紧急采购，3分钟左右您将得到回复。