参数资料
| 型号： | DG442LDY-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH QUAD SPST 16SOIC |
| 标准包装： | 500 |
| 功能： | 开关 |
| 电路： | 4 x SPST - NO |
| 导通状态电阻： | 35 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12 V，± 3 V ~ 6 V |
| 电流 - 电源： | 10µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
Document Number: 71399
S11-1066–Rev. E, 30-May-11
www.vishay.com
5
Vishay Siliconix
DG441L, DG442L
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (Single Supply 3 V)
Test Conditions
Unless Otherwise Specified
V + = 3 V, V - = 0 V
VIN = 0.4 V
f
A Suffix Limits
- 55 °C to 125 °C
D Suffix Limits
- 40 °C to 85 °C
Unit
Parameter
Symbol
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0303
V
Drain-Source
On-Resistance
RDS(on)
V + = 2.7 V, V - = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
65
80
115
80
100
On-Resistance Match
Between Channelse
RDS(on)
IS = 5 mA, VD = 2.2 V
Room
1
3
Switch Off
Leakage Currentg
IS(off)
V + = 3.3 , V - = 0 V
VD = 1, 2 V, VS = 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
nA
ID(off)
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Channel On
Leakage Currentg
ID(on)
V + = 3.3 V, V - = 0 V
VS = VD = 1, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Digital Control
Input Current, VIN Low
e
IIL
VIN under test = 0.4 V
Full
0.005
- 1.5
1.5
- 1
1
A
Input Current, VIN High
e
IIH
VIN under test = 2.4 V
Full
0.005
- 1.5
1.5
- 1
1
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Room
Full
50
136
175
136
151
ns
Turn-Off Time
tOFF
Room
Full
30
100
140
100
125
Charge Injectione
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
1
pC
Off Isolatione
OIRR
RL = 50 , CL = 5 pF , f = 1 MHz
Room
68
dB
Channel-to-Channel
Crosstalke
XTALK
Room
85
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
6
pF
Drain Off Capacitancee
CD(off)
Room
6
Channel On Capacitancee
CD(on)
Room
20
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