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参数资料
| 型号： | DG506BEQ-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 12/17页 |
| 文件大小： | 0K |
| 描述： | IC MUX ANA DUAL 16/8CH 28TSSOP |
| 标准包装： | 3,000 |
| 功能： | 多路复用器 |
| 电路： | 1 x 16:1 |
| 导通状态电阻： | 450 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 12V，±15V |
| 电流 - 电源： | 100µA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 28-TSSOP |
| 包装： | 带卷 (TR) |
Vishay Siliconix
DG506B, DG507B
www.vishay.com
4
Document Number: 65150
S13-2567-Rev. C, 16-Dec-13
This document is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: analogswitchtechsupport@vishay.com
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V (± 10 %)
VAX, VEN = 2.4 V, 0.8 V
a
Temp.b
Typ.c
A Suffix
-40 °C to 125 °C
D Suffix
-40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
-1515-15
15
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, IS = - 1 mA
Room
170
300
Full
400
RDS(on) Matching
R
DS(on)
VD = ± 10 V
Room
10
Source Off Leakage Current
IS(off)
VD = ± 10 V
VS =
10 V
VEN = 0 V
Room
0.005
-1
1
-1
1
nA
Full
-5050-50
50
Drain Off Leakage Current
ID(off)
DG506B
Room
0.005
-1
1
-1
1
Full
-100
100
-100
100
DG507B
Room
0.005
-1
1
-1
1
Full
-5050-50
50
Drain On Leakage Current
ID(on)
VS = VD =
10 V
sequence each
switch on
DG506B
Room
0.005
-1
1
-1
1
Full
-100
100
-100
100
DG507B
Room
0.005
-1
1
-1
1
Full
-5050-50
50
Digital Control
Logic High Input Voltage
VINH
Full
2.4
V
Logic Low Input Voltage
VINL
Full
0.8
Logic High Input Current
IIH
VAX, VEN = 2.4 V
Full
-1
1
-1
1
A
Logic Low Input Current
IIL
VAX, VEN = 0.8 V
Full
-1
1
-1
1
Logic Input Capacitancee
Cin
f = 1 MHz
Room
5
pF
Dynamic Characteristics
Transition Time
tTRANS
VS1 = +10 V/-10 V,
VS16 = -10 V/+10 V,
RL = 1 M, CL = 35 pF
see figure 2
Room
190
300
ns
Full
360
Break-Before-Make Interval
tOPEN
VS1 = VS16 = 5.0 V, CL = 35 pF,
RL = 1 k, see figure 4
Room
84
30
Full
10
Enable Turn-On Time
tON(EN)
VS1 = 5 V, VS2 to VS16 = 0 V,
RL = 1 k, CL = 35 pF
see figure 3
Room
151
250
Full
310
Enable Turn-Off Time
tOFF(EN)
Room
53
200
Full
220
Charge Injectione
QINJ
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Full
1
pC
Off Isolatione
OIRR
CL = 5 pF, RL = 50
f = 1 MHz
DG506B
Room
- 85
dB
DG507B
- 84
Crosstalke
XTALK
CL = 5 pF, RL = 50
f = 1 MHz
DG506B
Room
- 85
DG507B
- 84
- 3 dB Bandwidthe
BW
RL = 50
DG506B
Room
114
MHz
DG507B
217
Total Harmonic Distortione
THD
RL = 10 k, 5 Vrms
Room
0.04
%
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
3
pF
Drain Off Capacitancee
CD(off)
DG506B
Room
31
DG507B
Room
17
Drain On Capacitancee
CD(on)
DG506B
Room
38
DG507B
Room
24
Power Supply
Positive Supply Current
I+
VAX, VEN = 0 V or 5 V
Room
0.005
0.1
mA
Full
0.1
Negative Supply Current
I-
Full
-1
A
±
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