参数资料
| 型号： | DG643DY-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | IC VIDEO SWITCH SPDT 16SOIC |
| 标准包装： | 500 |
| 功能： | 视频开关 |
| 电路： | 2 x SPDT |
| 导通状态电阻： | 15 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 10 V ~ 18 V，±10 V ~ 15 V |
| 电流 - 电源： | 3.5mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
3
Vishay Siliconix
DG641, DG642, DG643
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
SPECIFICATIONS (for DG641 and DG643)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
VINH = 2.4 V, VINL = 0.8 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
V- = - 5 V, V+ = 12 V
Full
- 5
8
V
V- = GND V, V+ = 12 V
Full
0
8
Drain-Source On-Resistance
RDS(on)
IS = - 10 mA, VD = 0 V
Room
Full
815
20
RDS(on) Match
R
DS(on)
Room
1
2
Source Off Leakage Current
IS(off)
VS = 0 V, VD = 10 V
Room
Full
- 10
- 100
- 0.02
10
100
nA
Drain Off Leakage Current
ID(off)
VS = 10 V, VD = 0 V
Room
Full
- 10
- 100
- 0.02
10
100
Channel On Leakage Current
ID(on)
VS = VD = 0 V
Room
Full
- 10
- 100
- 0.1
10
100
Digital Control
Input Voltage High
VINH
Full
2.4
V
Input Voltage Low
VINL
Full
0.8
Input Current
IIN
VIN = GND or V+
Room
Full
- 1
- 20
0.05
1
20
A
Dynamic Characteristics
On State Input Capacitanced
CS(on)
VS = VD = 0 V
Room
10
20
pF
Off State Output Capacitanced
CS(off)
VS = 0 V
Room
4
12
Off State Input Capacitanced
CD(off)
VD = 0 V
Room
4
12
Bandwidth
BW
RL = 50 see figure 6
Room
500
MHz
Turn On Time
tON
RL = 1 kCL = 35 pF
see figure 2
Room
Full
50
70
140
ns
Turn Off Time
tOFF
Room
Full
28
50
85
Charge Injection
Q
CL = 1000 pF, VD = 0 V
see figure 3
Room
- 19
pC
Off Isolation
OIRR
RIN = 75 RL = 75
f = 5 MHz, see figure 4
Room
- 60
dB
All Hostie Crosstalk
XTALK
RIN = 10 , RL = 75
f = 5 MHz, see figure 5
Room
- 87
Power Supplies
Positive Supply Current
I+
VIN = 0 V or VIN = 5 V
Room
Full
3.5
6
9
mA
Negative Supply Current
I-
Room
Full
- 6
- 9
- 3
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相关代理商/技术参数 |
参数描述 |
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| DG643DY-T1 | 功能描述:多路器开关 IC Wideband Dual SPDT RoHS:否 制造商:Texas Instruments 通道数量:1 开关数量:4 开启电阻（最大值）:7 Ohms 开启时间（最大值）: 关闭时间（最大值）: 传播延迟时间:0.25 ns 工作电源电压:2.3 V to 3.6 V 工作电源电流: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UQFN-16 |
| DG643DY-T1-E3 | 功能描述:视频开关 IC Wideband Dual SPDT RoHS:否 制造商:Texas Instruments 开关数量:4 开启电阻（最大值）:12 Ohms 传播延迟时间: 开启时间（最大值）: 关闭时间（最大值）: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:WQFN-42 封装:Reel |
| DG646BH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GTO Thyristors - Disc / Puk Devices |
| DG646BH25 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25_05 | 制造商:DYNEX 制造商全称:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
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