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参数资料
| 型号： | DG648BH45 |
| 厂商： | DYNEX SEMICONDUCTOR LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | Gate Turn-off Thyristor |
| 中文描述： | 1169.65 A, 4500 V, GATE TURN-OFF SCR |
| 封装： | H, 4 PIN |
| 文件页数： | 1/19页 |
| 文件大小： | 221K |
| 代理商： | DG648BH45 |
DG648BH45
1/19
APPLICATIONS
I
Variable speed A.C. motor drive inverters (VSD-AC)
I
Uninterruptable Power Supplies
I
High Voltage Converters
I
Choppers
I
Welding
I
Induction Heating
I
DC/DC Converters
FEATURES
I
Double Side Cooling
I
High Reliability In Service
I
High Voltage Capability
I
Fault Protection Without Fuses
I
High Surge Current Capability
I
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
KEY PARAMETERS
I
TCM
V
DRM
I
T(AV)
dV
D
/dt
di
T
/dt
2000A
4500V
745A
1000V/
μ
s
300A/
μ
s
Outline type code: H.
See Package Details for further information.
VOLTAGE RATINGS
4500
DG648BH45
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
16
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/
μ
s, Cs = 2.0
μ
F
RMS on-state current
A
A
A
2000
745
1170
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
DG648BH45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4093-2.3
DS4093-3.0 January 2000
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