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参数资料
| 型号： | DG9053DQ-T1-E3 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Precision 8-Ch/Dual 4-Ch/Triple 2-Ch Low Voltage Analog Switches/Multiplexers |
| 中文描述： | 精密8-Ch/Dual 4-Ch/Triple 2通道低电压模拟开关/多路复用器 |
| 文件页数： | 6/12页 |
| 文件大小： | 178K |
| 代理商： | DG9053DQ-T1-E3 |
www.vishay.com
6
Document Number: 73410
S-52072-Rev. A, 10-Oct-05
Vishay Siliconix
DG9051/9052/9053
New Product
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25°C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g.
r
DON
= r
DON
Max – r
DON
Min.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
i. r
DON
flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (SINGLE SUPPLY 3 V)
Parameter
Symbol
Test Condition
Otherwise Unless Specified
V+ = 3 V, ±10 %, V– = 0 V
V
EN
= 0.4 V or 2.0 V
Temp
b
Limits
–40 to 85°C
Unit
Min
c
Typ
d
Max
c
Analog Switch
Analog Signal Range
e
On-Resistance
r
ON
Match Between Channels
g
V
ANALOG
r
ON
r
ON
Full
0
3
V
V+ = 2.7 V, V
D
= 1.5 V, I
S
= 0.1 mA
V+ = 2.7 V, V
D
= 1.5 V, I
S
= 0.1 mA
Room
Room
130
12
Switch Off Leakage Current
a
I
S(off)
V+ = 3.3 V, V
EN
= 2.0 V
V
S
= 3 or 0.3 V, V
D
= 0.3 or 3 V
Room
Full
Room
Full
–1
–20
–1
–20
1
20
1
20
nA
I
D(off)
Channel On Leakage Current
a
I
D(on)
V+ = 3.3 V, V
EN
= 0 V
V
S
= 3 or 0.3 V, V
D
= 0.3 or 3 V
Room
Full
–2
–10
2
10
Digital Control
Logic High Input Voltage
V
INH
V
INL
I
IN
Full
2.0
V
Logic Low Input Voltage
Full
0.4
Input Current
a
Dynamic Characteristics
V
AX
= V
EN
= 2.0 V or 0.4 V
Full
–1
1
μA
Transition Time
t
TRANS
V+ = 2.7 V, V
NO/NC
= 1.5 V/0 V, 0 V/1.5 V
R
L
= 300
, C
L
= 35 pF
Room
80
ns
Break-Before-Make Time
t
BBM
V+ = 2.7 V, V
X,Y, Z
= 1.5 V, V
S
= 0 V,
R
L
= 300
, C
L
= 35 pF
Room
Full
Room
5
25
Enable Turn-On Time
t
ON(EN)
t
OFF(EN)
Q
90
Enable Turn-Off Time
Charge Injection
e
Off-Isolation
e,h
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Drain On Capacitance
e
Power Supply
Power Supply Current
Room
Room
30
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
9
pC
OIRR
f = 1 MHz, R
L
= 50
Room
–78
dB
X
TALK
C
S(off)
C
D(off)
C
D(on)
Room
–83
f = 1 MHz, V
S
= 0 V, V
EN
= 1.8 V
f = 1 MHz, V
D
= 0 V, V
EN
= 1.8 V
f = 1 MHz, V
D
= 0 V, V
EN
= 0 V
Room
5
pF
Room
10
Room
15
I+
V
EN
= V
A
= 0 V or V+
Room
1.0
μA
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