参数资料
| 型号： | DG9236DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/13页 |
| 文件大小： | 0K |
| 描述： | IC ANLG SWITCH DUAL SPST 10QFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 2 x SPDT |
| 导通状态电阻： | 145 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 16 V |
| 电流 - 电源： | 500nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-UFQFN |
| 供应商设备封装： | 10-QFN |
| 包装： | 标准包装 |
| 其它名称： | DG9236DN-T1-E4DKR |
www.vishay.com
2
Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
Vishay Siliconix
DG9236
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
- 40 °C to 85 °C datasheet limits apply.
Notes:
a. Signals on SX, DX, or AX exceeding V+ or GND will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
10 pin miniQFN
DG9236DN-T1-E4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
V+ to GND
18
V
Digital Inputsa, VS, VD
(V+) + 0.3 or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30
mA
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
Storage Temperature
- 65 to 150
°C
Power Dissipation (Package)b
10 pin miniQFNc, d
208
mW
Thermal Resistance (Package)b
10 pin miniQFN
357
°C/W
SPECIFICATIONS (for 16 V Supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 16 V, VA0, A1 = 1.8 V, 0.5 V
a
Temp.b
Typ.c
- 40 °C to 85 °C
Unit
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
16
V
On-Resistance
RDS(on)
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
101
145
160
On-Resistance Match
R
ON
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
214
15
On-Resistance Flatness
RFLATNESS
IS = 1 mA,
VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V
Room
Full
38
55
60
Switch Off
Leakage Current
IS(off)
V+ = 16 V,
VD = 1 V/15 V, VS = 15 V/1 V
Room
Full
± 0.01
- 1
- 2
1
2
nA
ID(off)
Room
Full
± 0.01
- 1
- 2
1
2
Channel On
Leakage Current
ID(on)
V+ = 16 V, VD = VS 1 V/15 V
Room
Full
± 0.01
- 1
- 2
1
2
Digital Control
Input Current, VIN Low
IIL
VAX = 0.5 V
Full
0.005
- 0.1
0.1
A
Input Current, VIN High
IIH
VAX = 1.8 V
Full
0.005
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
3
pF
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
see figure 1, 2
Room
Full
30
70
80
ns
Turn-Off Time
tOFF
Room
Full
17
55
65
Break-Before-Make
tBBM
Room
Full
19
25
1
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
6
pC
Off Isolatione
OIRR
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 62
dB
Bandwidthe
BW
RL = 50
Room
800
MHz
Channel-to-Channel
Crosstalke
XTALK
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 70
dB
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