参数资料
| 型号： | DG9409DN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC MUX ANA DUAL 8/4CH 16QFN |
| 标准包装： | 2,500 |
| 功能： | 多路复用器 |
| 电路： | 2 x 4:1 |
| 导通状态电阻： | 7 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12 V，± 3 V ~ 6 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（4x4） |
| 包装： | 带卷 (TR) |
www.vishay.com
6
Document Number: 71870
S13-1288-Rev. D, 27-May-13
Vishay Siliconix
DG9408, DG9409
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g.
R
DON = RDON Max - RDON Min.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %
, V- = 0 V
VEN = 0.4 V or 1.8 V
f
Temp.b
Limits
- 40 °C to 85 °C
Unit
Min.c
Typ.d
Max.c
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
3
V
On-Resistance
RON
V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA
Room
Full
12
25.5
26.5
RON Match Between
Channelsg
R
ON
V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA
Room
3.6
On- Resistance Flatnessi
RON
Flatness
Room
13
Switch Off Leakage Currenta
IS(off)
V+ = 3.3 V
VS = 2 V or 1 V, VD = 1 or 2 V
Room
Full
- 2
- 15
2
15
nA
ID(off)
Room
Full
- 2
- 15
2
15
Channel On Leakage Currenta
ID(on)
V+ = 3.3 V
VD = VS = 1 V or 2 V, sequence each switch on
Room
Full
- 2
- 15
2
15
Digital Control
Logic High Input Voltage
VINH
Full
1.8
V
Logic Low Input Voltage
VINL
Full
0.4
Input Currenta
IIN
VAX = VEN = 1.8 V or 0.4 V
Full
- 1
1
A
Dynamic Characteristics
Transition Time
tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG9408)
VS1b = 1.5 V, VS4b = 0 V, (DG9409)
see fig. 2
Room
Full
140
165
182
ns
Break-Before-Make Time
tBBM
VS(all) = VDA = 1.5 V
see fig. 4
Room
Full
263
Enable Turn-On Time
tON(EN)
VAX = 0 V, VS1 = 1.5 V (DG9408)
VAX = 0 V, VS1b = 1.5 V (DG9409)
see fig. 3
Room
Full
140
162
178
Enable Turn-Off Time
tOFF(EN)
Room
Full
76
97
104
Charge Injectione
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Room
7
pC
Off Isolatione, h
OIRR
f = 100 kHz, RL = 1 k
Room
- 81
dB
Crosstalke
XTALK
Room
- 85
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V, VEN = 1.8 V
DG9408
Room
23
pF
DG9409
Room
25
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 1.8 V
DG9408
Room
230
DG9409
Room
120
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
DG9408
Room
256
DG9409
Room
147
Power Supplies
Power Supply Current
I+
VEN = VA = 0 V or V+
Room
1
A
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