参数资料
型号: DG9411DL
厂商: Vishay Intertechnology,Inc.
英文描述: Low-Voltage Single SPDT Analog Switch
中文描述: 低电压单SPDT模拟开关
文件页数: 2/8页
文件大小: 55K
代理商: DG9411DL
DG9411
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71347
S-02566
Rev. A, 10-Nov-00
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +6 V
-0.3 to (V+ + 0.3 V)
50 mA
200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
-65 to 125
°
C
Power Dissipation (Packages)
b
6-Pin SO70
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 mW
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 25 C
b.
c.
Test Conditions
Otherwise Unless Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 2.5 V,
10%, V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
Drain-Source On-Resistance
r
DS(on)
V+ = 2.25 V, V
D
= 1.0 V, I
S
= 10 mA
Room
Full
d
26
29
35
40
r
DS(on)
Flatness
d
r
Flatness
V+ = 2.5 V
Room
10
I
S(off)
V+ = 2.75 V
Room
Full
d
250
3.0
250
3.0
pA
nA
Switch Off Leakage Current
f
I
D(off)
V
S
= 0.5 V/1.5 V, V
D
= 1.5 V/0.5 V
Room
Full
d
250
3.0
250
3.0
pA
nA
Channel-On Leakage Current
f
I
D(on)
V+ = 2.75 V, V
S
= V
D
= 0.5 V/1.5 V
Room
Full
d
250
3.0
250
3.0
pA
nA
Digital Control
Input High Voltage
V
INH
Full
2
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
d
C
in
Full
3
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
A
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
d
16
40
45
Turn-Off Time
t
OFF
V
D
or V
S
= 1.5 V, R
= 300 , C
L
= 35 pF
Figures 1 and 2
Room
Full
d
7
23
28
ns
Break-Before-Make Time
t
d
Room
1
12
Charge Injection
d
Q
INJ
C
= 1 nF, V
= 0 V
V
GEN
= 0 V, R
GEN
= 0 , Figure 3
Room
5
10
pC
Off-Isolation
d
OIRR
Room
73
Crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room
70
dB
Source-Off Capacitance
d
C
S(off)
Room
7
Channel-On Capacitance
d
C
D(on)
V
= 0 or V+, f = 1 MHz
IN
Room
20
pF
Drain-to-Source Capacitance
d
C
DS(off)
Room
20
Power Supply
Power Supply Range
V+
2.25
2.75
V
Power Supply Current
d
I+
0.01
1.0
A
Power Consumption
P
C
V
IN
= 0 or V+
0.3
W
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