参数资料
型号: DG9422
厂商: Vishay Intertechnology,Inc.
英文描述: Precision Low-Voltage, Low-Glitch CMOS Analog Switches
中文描述: 精密低电压,低故障CMOS模拟开关
文件页数: 2/8页
文件大小: 71K
代理商: DG9422
DG9421/DG9422
Vishay Siliconix
www.vishay.com
2
Document Number: 70679
S-21424
Rev. C, 26-Aug-02
ABSOLUTE MAXIMUM RATINGS
V+ to V-
GND to V-
VINa
, V
S
, V
D
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 TO 13 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to (V+ +0.3 V) or 50 mA, whichever occurs first
. . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7 V
50 mA
100 mA
. . . . . . . . . . . .
-65 to 150 C
Power Dissipation (Package)b
6-Pin TSOP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
570 mW
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 7 mW/ C above 25 C
b.
c.
SPECIFICATIONS
a
(SINGLE SUPPLY 12 V)
Test Conditions Unless Specified
Limits
-40 to 85 C
Typ
c
Parameter
Symbol
V+ = 12 V, V- = 0 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
a
V
ANALOG
Full
0
12
V
Drain-Source
On-Resistance
r
DS(on)
V+ = 10.8 V, V- = 0 V
I
S
= 5 mA, V
D
= 2/9 V
Room
Full
2.0
3
3.4
Switch Off
Leakage Current
I
S(off)
Room
Full
-1
-10
1
10
I
D(off)
V
D
= 1/11 V, V
S
= 11/1 V
Room
Full
-1
-10
1
10
nA
Channel On
Leakage Current
I
D(on)
V
S
= V
D
=
11/1 V
Room
Full
-1
-10
1
10
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
I
IL
I
IH
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
Full
-1
0.02
1
Full
-1
0.02
1
A
Turn-On Time
e
t
ON
R
L
= 300
V
S
= 5 V See Figure 2
Room
Full
20
45
49
Turn-Off Time
e
t
OFF
, C
= 35 pF
Room
Full
25
47
59
ns
Charge Injection
e
Q
V
g
= 0 V, R
g
= 0
R
L
= 50
, C
L
= 1 nF
Room
0.8
pC
Off Isolation
e
OIRR
, C
= 5 pF,
f = 1 MHz
Room
-60
dB
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
C
S(off)
C
D(off)
C
D(on)
Room
31
f = 1 MHz
Room
30
pF
Room
71
Power Supplies
Positive Supply Current
I+
Room
Full
0.02
1
5
Negative Supply Current
I-
V
IN
= 0 or 12 V
Room
Full
-1
-5
-0.002
A
Ground Current
I
GND
Room
Full
-1
-5
-0.002
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