参数资料
型号: DG9432DQ
厂商: Vishay Intertechnology,Inc.
英文描述: Low-Voltage Dual SPST Analog Switch
中文描述: 低电压双路SPST模拟开关
文件页数: 3/9页
文件大小: 77K
代理商: DG9432DQ
DG9432/9433/9434
Vishay Siliconix
New Product
Document Number: 72311
S-31643—Rev. A, 01-Aug-03
www.vishay.com
3
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +13.5 V
-0.3 to (V+ + 0.3 V)
10 mA
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
-65 to 150
°
C
Power Dissipation (Packages)
b
MSOP-8
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOT23-8
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
320 mW
515 mW
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 75 C
b.
c.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85 C
Typ
b
Parameter
Symbol
V+ = 3.3 V,
10%, V
IN
= 0.4 or 1.8 V
e
Temp
a
Min
c
Max
c
Unit
Switch On Resistance
Analog Signal Range
e
V
ANALOG
Full
V-
V+
V
Drain-Source On-Resistance
r
(on)
V+ = 2.7 V, I
COM
= 1 mA,V
COM
= 1.5 V
Room
Full
81
100
120
r
(on)
Match
d
Digital Control
r
(on)
Room
0.4
3.0
Input, High Voltage
V
INH
V
INL
I
INH
V+ Ranges 2 7 to 5 V
V+ Ranges 2.7 to 5 V
Full
1.8
V
Input, Low Voltage
Full
0.4
Input Current
-1
1
A
Dynamic Characteristics
Break-Before-Make
d,g
t
OPEN
V 3 V R 300
V+ = 3 V, R
= 300
V
= V
NC
= 1.5 V
C
L
= 35 pF, V
IN
= 0 V, 3 V
Room
Full
1
Turn-OnTime
d
t
ON
Room
Full
60
80
100
ns
Turn-OffTime
d
t
OFF
Room
Full
14
25
35
Charge Injection
d
Q
C
L
= 1 nF, R
GEN
= 0 , Vg = 0 V
C
L
= 5 pF, R
L
= 50 , f = 1 MHz
C
L
= 5 pF, R
L
= 50 , f = 10 MHz
R
L
= 50 , f = 1 MHz, V+ = 2.5 V
f = 1 MHz, V
NC/NO
= 0 V
Room
0.16
pC
Off Isolation
Off-Isolation
d
OIRR
Room
77
Room
55
dB
Crosstalk
d
Source Off Capacitance
d
Drain Off Capacitance
d
Drain On Capacitance
d
X
TALK
C
NC/NO(off)
C
COM(off)
C
COM(on)
I
+
Room
98
Room
7.5
f = 1 MHz V
f = 1 MHz, V
COM
= 0 V
Room
7.8
pF
Room
22
Supply Current
V+ = 3.3 V, V
IN
= 0 or V+
Room
-1
-1
A
Notes:
a.
b.
c.
d.
e.
f.
g.
Room = 25
°
C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, not subjected to production test.
V
= input voltage to perform proper function.
Guaranteed by 12-V leakage testing, not production tested.
Applies for DG9434 only.
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DG9432DS-T1-E3 功能描述:模拟开关 IC Low-Volt Dual SPST RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻(最大值):0.1 Ohms 切换电压(最大): 开启时间(最大值): 关闭时间(最大值): 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16
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