参数资料
型号: DG9461DY-T1-E3
厂商: Vishay Siliconix
文件页数: 3/8页
文件大小: 0K
描述: IC SWITCH LV SPDT 8SOIC
标准包装: 2,500
功能: 开关
电路: 1 x SPDT
导通状态电阻: 60 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 2.7 V ~ 5 V
电流 - 电源: 1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
Document Number: 70832
S-71009–Rev. C, 14-May-07
www.vishay.com
3
Vishay Siliconix
DG9461
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 V
e
Tempa
D Suffix
- 40 to 85 °C
Unit
Minc
Typb
Maxc
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
5
V
Drain-Source On-Resistance
rDS(on)
VNO or VNC = 3.5 V, V+ = 4.5 V
ICOM = 5 mA
Room
Full
30
60
75
Ω
rDS(on)Match
d
Δr
DS(on)
VNO or VNC = 1.5 V
Room
0.4
2
rDS(on) Flatness
f
rDS(on)
Flatness
VNO or VNC = 1,2 and 3 V
Room
2
6
NO or NC Off Leakage Current
INO/NC(off)
VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
pA
COM Off Leakage Current
ICOM(off)
VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
Channel-On Leakage Current
ICOM(on)
VCOM = VNO or VNC = 1 V/4 V
Room
Full
- 200
- 10000
200
10000
Digital Control
Input Current
IINL or IINH
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 3.0 V
Room
Full
35
75
150
ns
Turn-Off Time
tOFF
Room
Full
20
50
100
Break-Before-Make Time
td
Room
3
10
Charge Injection
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
Room
2
5
pC
Off-Isolation
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 74
dB
NC and NO Capacitance
C(off)
f = 1 MHz
Room
- 7
pF
Channel-On Capacitance
CD(on)
Room
32
Power Supply
Power Supply Range
V+
2.7
12
V
Power Supply Current
I+
V+ = 5.5 V, VIN = 0 or 5.5 V
1A
相关PDF资料
PDF描述
DEHR33D182KA3B CAP CER 1800PF 2KV 10% RADIAL
DEHR33A332KN7A CAP CER 3300PF 1KV 10% RADIAL
PIC24FJ256GB108-I/PT IC PIC MCU FLASH 256K 80TQFP
PIC18F6722T-I/PT IC PIC MCU FLASH 64KX16 64TQFP
PIC18F448-E/PT IC MCU FLASH 8KX16 W/CAN 44-TQFP
相关代理商/技术参数
参数描述
DG9623DY-T1-E3 功能描述:开关 IC - 各种 Dual SPST Switch RoHS:否 制造商:Fairchild Semiconductor 开启电阻(最大值): 电源电压-最大:4.4 V 电源电压-最小:2.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:WLCSP-9 封装:Reel
DG9636 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual SPDT Analog Switch
DG9636DN-T1-E4 制造商:Vishay Siliconix 功能描述:DUAL SPDT ANALOG SWITCH - Tape and Reel 制造商:Vishay Siliconix 功能描述:IC SWITCH DUAL SPST 10QFN
DG9636EN-T1-E4 功能描述:模拟开关 IC DUAL SPDT SWITCH RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻(最大值):0.1 Ohms 切换电压(最大): 开启时间(最大值): 关闭时间(最大值): 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16
DG965MQ 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Technical Product Specification