参数资料
型号: DH72025
厂商: TEMEX COMPONENTS
元件分类: 参考电压二极管
英文描述: X BAND, 2.5 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
封装: F27D, 2 PIN
文件页数: 1/2页
文件大小: 59K
代理商: DH72025
12-34
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.com
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
typ.
± 20 % (2)
min.
Cb= 0.18 pF (3) min.
Cb= 0.12 pF (3) min.
EH71004
C2a
50
0.4
4500
DH71004
F27d
3.0
M208
3.3
EH71006
C2a
60
0.6
4500
DH71006
F27d
3.4
M208
3.7
EH71008
C2a
70
0.8
4400
DH71008
F27d
3.7
M208
4.0
EH71010
C2a
80
1.0
4300
DH71010
F27d
4.0
M208
4.3
EH71012
C2a
90
1.2
4200
DH71012
F27d
4.3
M208
4.5
EH71016
C2a
100
1.6
4100
DH71016
F27d
4.5
M208
4.6
EH71020
C2a
110
2.0
3900
DH71020
F27d
4.6
M208
4.7
EH71025
C2a
120
2.5
3600
DH71025
F27d
4.6
M208
4.8
EH71030
C2a
140
3.0
3400
DH71030
F27d
4.7
M208
4.8
EH71037
C2a
150
3.7
3200
DH71037
F27d
4.7
M208
4.8
EH71045
C2a
170
4.5
3000
DH71045
F27d
4.8
M208
4.9
EH71054
C2a
180
5.4
2800
DH71054
F27d
4.8
M208
4.9
± 10 % (2)
Cb= 0.18 pF (3)
Cb= 0.2 pF (3)
EH71067
C2a
200
6.7
2600
DH71067
F27d
4.9
BH142
4.9
EH71080
C2b
220
8.0
2400
DH71080
F27d
5.0
BH142
5.0
EH71100
C2b
250
10.0
2200
DH71100
F27d
5.0
BH142
5.0
EH71120
C2b
270
12.0
2000
DH71120
F27d
5.1
BH142
5.1
EH71150
C2b
300
15.0
1800
DH71150
F27d
5.1
BH142
5.1
EH71180
C2b
330
18.0
1700
DH71180
F27d
5.2
BH142
5.2
EH71200
C2b
350
20.0
1500
DH71200
F27d
5.2
BH142
5.2
EH71220
C2b
370
22.0
1400
DH71220
F27d
5.2
BH142
5.2
EH71270
C2b
410
27.0
1300
DH71270
F27d
5.2
BH142
5.2
EH71330
C2c
450
33.0
1200
DH71330
F27d
5.2
BH142
5.2
EH71390
C2c
500
39.0
950
DH71390
F27d
5.2
BH142
5.2
EH71470
C2c
540
47.0
750
DH71470
F27d
5.2
BH142
5.2
EH71560
C2c
590
56.0
650
DH71560
F27d
5.2
BH142
5.2
EH71680
C2c
650
68.0
500
DH71680
F27d
5.2
BH142
5.2
EH71820
C2d
720
82.0
400
DH71820
F27d
5.2
BH142
5.2
EH71999
C2d
800
100.0
300
DH71999
F27d
5.2
BH142
5.2
V
BR 30 V
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
Description
(1) Custom cases available on request
Temperature ranges:
(2) Closer capacitance tolerances available on request
Operating junction (Tj) : -55° C to +150° C
(3) CT = Cj + Cb
Storage
: -65° C to +175° C
Type
Case
m
pF
Type
Case
CASE
CAPACITANCE
Cb
V
R = 4 V
V
R = 4 V
f= 1 MHZ
f = 50 MHZ
Test Conditions
Gold
junction
Fig. of
Tuning
dia
capacitance
merit
ratio
Cj
QC
TO/CT30
C
TO/CT30
Characteristics at 25°C
V
BR (10 A) ≥ 30 V
Standard cases
Other cases
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES (1)
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
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