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参数资料
| 型号： | DIMD10A-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, PLASTIC, SC-74R, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 210K |
| 代理商： | DIMD10A-7 |
DS30391 Rev. 4 - 2
2 of 4
DIMD10A
www.diodes.com
Characteristic
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
Min
-0.3
68
Typ
-0.1
Max
-1.5
-0.3
-25
-0.5
Unit
Test Condition
Input Voltage
V
V
CC
= -5V, I
O
= -100
μ
A
V
O
= 0.3, I
O
= -100mA
I
O
= -100mA/-5mA
V
I
= -2V
V
CC
= -50V, V
I
= 0V
Output Voltage
Input Current
Output Current
DC Current Gain
V
mA
μ
A
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= -50mA,
f = 100MHz
Electrical Characteristics PNP Section Tr1
@ T
A
= 25
°
C unless otherwise specified
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Min
50
50
5
100
Typ
250
250
Max
0.5
0.5
0.3
600
Unit
V
V
V
μ
A
μ
A
V
MHz
Test Condition
I
C
= 50
μ
A
I
C
= 1mA
I
E
= 50
μ
A
V
CB
= 50V
V
EB
= 4V
I
C
/I
B
= 10mA / 1.0mA
I
C
= 1mA, V
CE
= 5V
V
CE
= 10V, I
E
= -5mA, f = 100MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
C
U
D
O
R
P
W
E
N
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