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| 型号： | DLD101-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVER HP CONST CURR 8DFN |
| 标准包装： | 1 |
| 恒定电流： | 是 |
| 拓扑： | 线性，PWM |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 电源电压： | 50V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3030D（3x3） |
| 包装： | 标准包装 |
| 工作温度： | -55°C ~ 150°C |
| 产品目录页面： | 1139 (CN2011-ZH PDF) |
| 其它名称： | DLD101-7DKR |
DLD101
Thermal Characteristics – Total Device
Characteristic
Symbol
Value
Unit
0.7 (Note 3)
Power Dissipation @T A = 25°C
P D
0.9 (Note 4)
W
1.4 (Note 5)
Thermal Resistance Junction to Ambient @T A = 25°C
Thermal Resistance Junction to Case @T A = 25°C
Operating and Storage Temperature Range
R θ JA
R θ JC
T J , T STG
See Figure 1
(Notes 3, 4, & 5)
See Figure 2
(Notes 3, 4, & 5)
-55 to +150
° C/W
° C/W
° C
Notes:
3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).
4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated.
5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.
Electrical Characteristics: (Q1)
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
?
?
?
?
?
?
1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V GS(th)
R DS (ON)
g fs
V SD
2.0
?
?
?
?
?
?
0.9
0.89
4.1
0.85
0.99
?
1.1
V
Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1A
V DS = 15V, I D = 1A
V GS = 0V, I S = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
129
14
8
?
?
?
pF
pF
pF
V DS = 50V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q g
?
3.4
?
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
0.9
1
7.9
11.4
14.3
9.6
?
?
?
?
?
?
nC
ns
V DS = 50V, V GS = 10V, I D = 1A
V GS = 50V, V DS = 10V,
I D = 1A, R G ≈ 6 Ω
Electrical Characteristics: (Q2)
@T A = 25°C unless otherwise specified
Characteristic (Note 6)
Input Voltage
Output Voltage
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V I(off)
V I(on)
V O(on)
I O(off)
G 1
R 1
R 2 /R 1
f T
Min
0.4
-
-
-
80
3.2
8
-
Typ
-
-
0.05
-
-
4.7
10
260
Max
-
1.5
0.3
0.5
-
6.2
12
-
Unit
V
V
V
μ A
-
k ?
-
MHz
Test Condition
V CC = 5V, I O = 100 μ A
V CC = 0.3V, I O = 5mA
I O /I I = 5mA/0.25mA
V CC = 50V, V I = 0V
V O = 5V, I O = 10mA
-
-
V CE = 10V, I E = 5mA,
f = 100MHz
Notes:
6. Short duration pulse test used to minimize self-heating effect.
DLD101
Document number: DS32007 Rev. 8 - 2
2 of 9
www.diodes.com
April 2010
? Diodes Incorporated
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