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| 型号： | DMC2004LPK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL PAIR 6-DFN |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA，600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD，无引线 |
| 供应商设备封装： | 6-DFN1612（1.2x1.6） |
| 包装： | 带卷 (TR) |
DMC2004LPK
Maximum Ratings N-CHANNEL – Q 1
(@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 8
Unit
V
V
Drain Current (Note 5)
T A = +25°C
T A = +85°C
I D
750
540
mA
Maximum Ratings P-CHANNEL – Q 2
(@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 8
Unit
V
V
Drain Current (Note 5)
T A = +25°C
T A = +85°C
I D
-600
-430
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
500
250
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics N-CHANNEL – Q 1
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
—
—
—
—
—
—
1
± 1
V
μA
μA
V GS = 0V, I D = 10μA
V DS = 16V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5
—
1.0
V
V DS = V GS , I D = 250μA
—
0.4
0.55
V GS = 4.5V, I D = 540mA
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
R DS (ON)
|Y fs |
V SD
—
—
200
0.5
0.5
0.7
—
—
0.70
0.90
—
1.2
?
mS
V
V GS = 2.5V, I D = 500mA
V GS = 1.8V, I D = 350mA
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
—
—
—
—
—
—
150
25
20
pF
pF
pF
V DS = 16V, V GS = 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q 2
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
—
—
—
—
—
—
-1.0
± 1.0
V
μA
μA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5
—
-1.0
V
V DS = V GS , I D = -250μA
0.7
0.9
V GS = -4.5V, I D = -430mA
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
R DS (ON)
|Y fs |
V SD
—
200
-0.5
1.1
1.7
—
—
1.4
2.0
—
-1.2
?
mS
V
V GS = -2.5V, I D = -300mA
V GS = -1.8V, I D = -150mA
V DS =10V, I D = 0.2A
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
—
—
—
—
—
—
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
? Diodes Incorporated
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