- 您现在的位置：买卖IC网 > Datasheet目录405 > DMG7702SFG-7 (Diodes Inc)MOSFET N-CH 30V 12A PWRDI3333-8 Datasheet资料下载
参数资料
| 型号： | DMG7702SFG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 12A PWRDI3333-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4310pF @ 15V |
| 功率 - 最大： | 890mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | PowerDI3333-8 |
| 包装： | 标准包装 |
| 其它名称： | DMG7702SFG-7DIDKR |
DMG7702SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI ?
Product Summary
Features
V (BR)DSS
R DS(ON)
Package
I D
T A = +25°C
?
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low R DS(ON) – minimize conduction losses
10m ? @ V GS = 10V
12 A
Low V SD – reducing the losses due to body diode conduction
30V
15m ? @ V GS = 4.5V
POWERDI3333-8
9.5A
Low Q rr – lower Q rr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
?
?
?
?
?
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
?
?
Backlighting
Power Management Functions
Mechanical Data
?
DC-DC Converters
?
?
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate
Drain
S
S
Pin 1
S
8
7
6
5
G
Gate
D
Top View
D
D
D
Bottom View
1
2 3 4
Top View
Source
Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number
DMG7702SFG-7
DMG7702SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
1 of 8
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG8601UFG-7 | MOSFET 2N-CH 20V 6.1A DFN |
| DMG8822UTS-13 | MOSFET ARRAY 20V 4.9A 8TSSOP |
| DMG8880LK3-13 | MOSFET N-CH 30V 11A TO252-3L |
| DMG9926UDM-7 | MOSFET N-CH DUAL 20V 4.2A SOT-26 |
| DMG9926USD-13 | MOSFET 2N-CH 20V 8A SOP8L |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG8601UFG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG8601UFG-7 | 功能描述:MOSFET LDO POSITIVE REG 2.7V/1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG8822UTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG8822UTS-13 | 功能描述:MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG8880LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。