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参数资料
| 型号： | DMN2005LPK-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC, DFN1006, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 135K |
| 代理商： | DMN2005LPK-7 |
UNDER DEVELOPMENT
Notes: 5. Short duration test pulse used to minimize self-heating effect.
DS30836 Rev. 3 - 1
2 of 4
DMN2005LPK
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (per element) (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
20
V
A
V
GS
= 0V, I
D
= 100 A
V
DS
= 17V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
10
5
A
V
GS(th)
0.53
1.2
1.5
1.7
1.7
3.5
3.5
V
V
DS
= V
GS
, I
D
= 100 A
V
GS
= 4V, I
D
= 10mA
V
GS
= 2.7V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
V
DS
= 3V, I
D
= 10mA
Static Drain-Source On-Resistance
R
DS (ON)
0.9
0.85
1.2
2.4
2.5
Forward Transfer Admittance
|Y
fs
|
40
mS
N
0
0
1
2
3
4
5
V
Fig. 1 Typical Output Characteristics
DRAIN-SOURCE VOLTAGE (V)
DS
,
I
D
D
,
0.3
0.6
0.9
TBD
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Reverse Drain Current
vs. Source-Drain Voltage
GS
100
0
1000
I
D
D
200
300
400
500
600
700
800
900
0.4
0.8
1.2
1.6
2
TBD
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
V
G
G
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-75
-50
-25
0
25
50
75
100
125
150
TBD
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
D
,
1
0.2
0.4
0.6
0.8
1.0
TBD
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