| 型号: | DMN2600UFB-7B |
| 元件分类: | 开关 |
| 英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数: | 1/7页 |
| 文件大小: | 525K |
| 代理商: | DMN2600UFB-7B |

相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN26D0UDJ | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UDJ-7 | 功能描述:功率驱动器IC DUAL N-CH 20V 0.23A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| DMN26D0UFB4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN26D0UFB4_12 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UFB4-7 | 功能描述:MOSFET ENHANCE MODE MOSFET 20V N-Chan RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |