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参数资料
| 型号： | DMN3135LVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 30V 4.1A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 305pF @ 15V |
| 功率 - 最大： | 840mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | TSOT26 |
| 包装： | 标准包装 |
| 其它名称： | DMN3135LVT-7DIDKR |
DMN3135LVT
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
30V
R DS(on)
60m Ω @ V GS = 10V
100m Ω @ V GS = 4.5V
I D
T A = 25°C
3.5A
2.8A
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
? Case: TSOT26
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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?
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Backlighting
DC-DC Converters
Power management functions
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
TSOT26
Top View
Ordering Information (Note 4)
G1 1
S2 2
G2 3
Top View
6 D1
5 S1
4 D2
Equivalent Circuit
Part Number
DMN3135LVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
31D = Product Type Marking Code
31D
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
1 of 6
www.diodes.com
May 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
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| DMN3150L-7 | MOSFET N-CH 28V 3.2A SOT23-3 |
| DMN3150LW-7 | MOSFET N-CH 28V 1.6A SC70-3 |
| DMN3200U-7 | MOSFET N-CH 30V 2.2A SOT23-3 |
| DMN32D2LDF-7 | MOSFET 2N-CH 30V 400MA SOT353 |
| DMN32D2LFB4-7 | MOSFET N-CH 30V 300MA 3-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3150L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN3150L-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3150LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN3150LW-7 | 功能描述:MOSFET 0.35W 28V 1.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3200U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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