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| 型号： | DMP2004K-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 600MA SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 430mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 175pF @ 16V |
| 功率 - 最大： | 550mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMP2004KDIDKR |
DMP2004K
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V GS = -4.5V
Pulsed Drain Current
Symbol
V DSS
V GSS
I D
I DM
Value
-20
±8
-600
-1.9
Units
V
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
550
227
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
—
—
—
—
—
—
-1
±1.0
V
μ A
μA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5
—
-1.0
V
V DS = V GS , I D = -250μA
—
0.7
0.9
V GS = -4.5V, I D = -430mA
Static Drain-Source On-Resistance
R DS (ON)
—
1.1
1.4
?
V GS = -2.5V, I D = -300mA
—
1,7
2.0
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
200
-0.5
—
—
—
-1.2
mS
V
V DS = -10V, I D = -0.2A
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
8.5
4.3
20.2
19.2
175
30
20
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V DS = -16V, V GS = 0V
f = 1.0MHz
V DD = -3V, V GS = -2.5V,
R L = 300 ? , R G = 25 ? ,
I D = -100mA
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP2004K
Document number: DS30933 Rev. 7 - 2
2 of 5
www.diodes.com
July 2012
? Diodes Incorporated
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