参数资料
型号: DPG10IM300UC
厂商: IXYS
文件页数: 2/5页
文件大小: 130K
描述: DIODE HFRED 300V 10A TO-252DPAK
标准包装: 2,500
系列: HiPerFRED™
二极管类型: 标准
电压 - (Vr)(最大): 300V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 1.27V @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 1µA @ 300V
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 带卷 (TR)
DPG10IM300UC
ns
3
A
TVJ
=°C25
reverse recovery time
A
5.5
35
45
ns
IRM
max. reverse recovery current
IF
=A;10
VR
=V200
T=125°CVJ
-diF/dt
=A/μs200
trr
TVJ
=°C25
T=125°CVJ
V = VR
300
Symbol Definition
Ratings
typ. max.
IR
V
IFAV
A
VF
1.27
RthJC
2.3 K/W
min.
10
VRSM
V
1
T = 25°CVJ
T = °CVJ
150
mA
0.06
V = VR
300
T = 25°CVJ
I = AF
10
V
T = °CC
150
Ptot
65
W
T = 25°CC
RthCH
K/W
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.45
T = 25°CVJ
VF0
V
0.74
T = °CVJ
175
rF
17.7
m?
V
0.98
T = °CVJ
150
I = AF
10
V
1.17
I = AF
20
I = AF
20
threshold voltage
slope resistance
for power loss calculation only
μA
VRRM
V
300
max. repetitive reverse blocking voltage
T = 25°CVJ
CJ
15
junction capacitance
V = VR
150 T = 25°Cf = 1 MHz
VJ
pF
IFSM
t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR
VJ
max. forward surge current
T = °CVJ
175
140
A
rectangular 0.5d =
average forward current
thermal resistance junction to case
thermal resistance case to heatsink
Fast Diode
300
0.50
IXYS reserves the right to change limits, conditions and dimensions.
20131125a
Data according to IEC 60747and per semiconductor unless otherwise specified
? 2013 IXYS all rights reserved
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