参数资料
| 型号： | DRDNB21D-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | RELAY DRIVER ARRAY DUAL SOT-363 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 电流 - 峰值输出： | 100mA |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1599 (CN2011-ZH PDF) |
| 其它名称： | DRDNB21D-7DIDKR |
DRDNB21D
Maximum Ratings , Total Device @T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Junction Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
200
625
-55 to +150
Unit
mW
° C/W
° C
Maximum Ratings , Pre-Biased NPN Transistor @T A = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Base-Emitter Voltage
Output Current
Peak Collector Current
Symbol
V CC
V in
I O
I CM
Value
50
-5 to +12
100
100
Unit
V
V
mA
mA
Maximum Ratings, Switching Diode @T A = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0 μ s
@ t = 1.0s
Symbol
V RM
V RRM
V RWM
V R
V R(RMS)
I FM
I O
I FSM
Value
100
75
53
500
250
4.0
1.0
Unit
V
V
V
mA
mA
A
Electrical Characteristics, Pre-Biased NPN Transistor @T A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
Symbol
V l(off)
V l(on)
V O(on)
I l
I O(off)
G l
Δ R1
Δ R2/R1
f T
Min
0.5
?
?
?
?
80
-30
-20
?
Typ
?
?
?
?
?
?
?
?
250
Max
?
1.1
0.3
3.6
0.5
?
+30
+20
?
Unit
V
V
V
mA
uA
?
%
%
MHz
Test Condition
V CC = 5V, I O = 100 μ A
V O = 0.3V, I O = 5mA
I O /I l = 50mA/0.25mA
V I = 5V
V CC = 50V, V I = 0V
V O = 5V, I O = 10mA
-
-
V CE = 10V, I E = 5mA, f = 100MHz
*
Transistor - For Reference Only
Electrical Characteristics, Switching Diode
@T A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Symbol
V (BR)R
V F
I R
Min
75
0.62
?
?
?
?
Max
?
0.72
0.855
1.0
1.25
2.5
50
30
Unit
V
V
μ A
μ A
μ A
Test Condition
I R = 10 μ A
I F = 5.0mA
I F = 10mA
I F = 100mA
I F = 150mA
V R = 75V
V R = 75V, T J = 150 ° C
V R = 25V, T J = 150 ° C
25
nA
V R = 20V
Total Capacitance
Reverse Recovery Time
C T
t rr
?
?
4.0
4.0
pF
ns
V R = 0, f = 1.0MHz
I F = I R = 10mA, I rr = 0.1 x I R , R L = 100 Ω
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.
DRDNB21D
Document number: DS30756 Rev. 6 - 2
2 of 7
February 2011
? Diodes Incorporated
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