- 您现在的位置：买卖IC网 > PDF目录381717 > DS1211 (MAXIM INTEGRATED PRODUCTS INC) Nonvolatile Controller x 8 Chip(非易失性控制器x 8 芯片) PDF资料下载
参数资料
| 型号： | DS1211 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | Nonvolatile Controller x 8 Chip(非易失性控制器x 8 芯片) |
| 中文描述： | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| 封装： | 0.300 INCH, DIP-20 |
| 文件页数： | 1/1页 |
| 文件大小： | 21K |
| 代理商： | DS1211 |
DS1211
Nonvolatile Controller x 8 Chip
DS1211
021798 1/1
FEATURES
Converts full CMOS RAMs into nonvolatile memories
Unconditionally write protects when V
CC
is out of
tolerance
Automatically switches to battery when power fail
occurs
3 to 8 decoder provides control for up to eight CMOS
RAMs
Consumes less than 100 nA of battery current
Tests battery condition on power-up
Provides for redundant batteries
Power fail signal can be used to interrupt processor on
power failure
Optional 5% or 10% power fail detection
Optional 20-pin SOIC surface mount package
Optional industrial temperature range of
-40
°
C to +85
°
C
PIN ASSIGNMENT
8
9
10
VCCI
VBAT2
CE
CE0
CE1
CE2
CE3
NC
CE4
CE5
VBAT1
VCCO
TOL
PF
CE7
CE6
C
B
A
GND
VCCO
TOL
PF
CE7
CE6
C
B
A
GND
VBAT1
VBAT2
CE
CE0
CE1
CE2
CE3
NC
CE4
CE5
VCCI
20-Pin DIP (300 MIL)
See Mech. Drawings
Section
20-Pin SOIC (300 MIL)
See Mech. Drawings
Section
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
17
18
19
20
1
2
3
4
5
6
7
11
12
13
14
15
16
17
18
19
20
PIN DESCRIPTION
A, B, C
CE
CE0 - CE7
GND
V
BAT1
V
BAT2
TOL
V
CCI
V
CC0
PF
NC
– Address Inputs
– Chip Enable Input
– Chip Enable Outputs
– Ground
– + Battery 1
– + Battery 2
– Power Supply Tolerance
– +5V Supply
– RAM Supply
– Power Fail
– No Connection
DESCRIPTION
The DS1211 Nonvolatile Controller x 8 Chip is a CMOS
circuit which solves the application problem of convert-
ing CMOS RAMs into nonvolatile memories. Incoming
power is monitored for an out-of-tolerance condition.
When such a condition is detected, the chip enables are
inhibited to accomplish write protection and the battery
is switched on to supply RAMs with uninterrupted pow-
er. Special circuitry uses a low-leakage CMOS process
which affords precise voltage detection at extremely low
battery consumption.
By combining the DS1211 nonvolatile controller/decod-
er chip and lithium batteries, nonvolatile RAM operation
can be achieved for up to eight CMOS memories.
See the data sheet for the DS1212 Nonvolatile Control-
ler x 16 Chip for electrical specifications and operation.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1215 | Using the Dallas Phantom Real Time Clocks(实时时钟芯片) |
| DS1216B | SmartWatch/RAM 16K/64K(16K/64K位带实时时钟的掉电保护RAM插座) |
| DS1216C | SmartWatch/RAM 16K/65K(16K/65K位带实时时钟的掉电保护RAM插座) |
| DS1216D(中文) | Using the Dallas Phantom Real Time Clocks(256K/1M位带实时时钟的带掉电保护SRAM插座) |
| DS1216D | Using the Dallas Phantom Real Time Clocks(256K/1M位带实时时钟的带掉电保护SRAM插座) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1211+ | 功能描述:IC CONTROLLER 8-CHIP NV 20-DIP RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1211N | 功能描述:IC CONTROLLER 8-CHIP NV 20-DIP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1211-N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Nonvolatile Controller |
| DS1211N+ | 功能描述:IC CONTROLLER 8-CHIP NV 20-DIP RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1211S | 功能描述:IC CONTROLLER 8-CHIP NV 20-SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。