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参数资料
| 型号： | DS1217M-1-25 |
| 厂商： | Maxim Integrated |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | RAM READ/WRITE NV 1MEG CARTRIDGE |
| 标准包装： | 1 |
| 存储器类型： | NVRAM |
| 存储容量： | 128KB |
| 速度： | 250ns |
| 封装/外壳： | 30-卡边缘盒式模块 |
DS1217M Nonvolatile Read/Write Cartridge
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(T A = 0°C to +70°C)
PARAMETER
CE at V IH Before Power-Down
SYMBOL
t PD
CONDITIONS
(Note 9)
MIN
0
TYP
MAX
UNITS
? s
V CC Slew from 4.5V to 0
( CE at V IH )
V CC Slew from 0 to 4.5V
( CE at V IH )
t F
t R
100
0
? s
? s
CE at V IH After Power-Up
t REC
(Note 9)
2
125
ms
(T A = +25°C)
PARAMETER
Expected Data Retention
Time
SYMBOL
t DR
CONDITIONS
(Note 10)
MIN
5
TYP
MAX
UNITS
years
WARNING: Under no circumstances are negative undershoots of any amplitude allowed when the device is in
battery-backup mode.
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
WE is high for a read cycle.
OE = V IH or V IL . If OE = V IH during a write cycle, the output buffers remain in a high-impedance state.
If the CE low transition occurs simultaneously with or later than the WE high transition in Write Cycle 1, that output buffers remain in
a high-impedance state in this period.
If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the output buffers remain in a
high-impedance state in this period.
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-
impedance state in this period.
Removing and installing the cartridge with power applied may disturb data.
Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of
manufacture. The expected t DR is defined as starting at the date of manufacture. This parameter is assured by component selection,
process control, and design. It is not measured directly during production testing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1217M1-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-2-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M2-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-3-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M3-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
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