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参数资料
| 型号： | DS1220AB-100IND |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16KBIT 100NS 24DIP |
| 标准包装： | 14 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 24-EDIP |
| 包装： | 管件 |
DS1220AB/AD
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
V CC is first applied by the user. The expected t DR is defined as accumulative time in the absence of
V CC starting from the time power is first applied by the user. This parameter is guaranteed by design
and is not 100% tested.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power down condition the voltage on any pin may not exceed the voltage on V CC .
12. t WR1 , t DH1 are measured from WE going high.
13. t WR2 , t DH2 are measured from CE going high.
14. DS1220 modules are recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for Operating Current
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART
DS1220AB-100+
DS1220AB-100IND+
DS1220AD-100+
DS1220AD-100IND+
TEMP RANGE
0°C to +70°C
-40°C to +85°C
0°C to +70°C
-40°C to +85°C
SUPPLY
TOLERANCE
5V ± 5%
5V ± 5%
5V ± 10%
5V ± 10%
PIN-PACKAGE
24 720 EDIP
24 720 EDIP
24 720 EDIP
24 720 EDIP
+ Denotes a lead(Pb)-free/RoHS-compliant package.
PACKAGE INFORMATION
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages . Note
that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a
different suffix character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
24 EDIP
PACKAGE CODE
MDT24+1
OUTLINE NO.
21-0245
LAND
PATTERN NO.
?
7 of 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AB-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AB-100IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-120 | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-120+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-120-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
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