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参数资料
| 型号： | DS1220AD-200IND+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16KBIT 200NS 24DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 14 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 16K (2K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 24-EDIP |
| 包装： | 管件 |
DS1220AB/AD
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Commercial:
Industrial:
Storage Temperature
Lead Temperature (soldering, 10s)
-0.3V to +6.0V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
+260°C
Note: EDIP is wave or hand soldered only.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T A : See Note 10)
PARAMETER
SYMBOL MIN TYP
MAX UNITS
NOTES
DS1220AB Power Supply Voltage
DS1220AD Power Supply Voltage
Logic 1
Logic 0
V CC
V CC
V IH
V IL
4.75
4.50
2.2
0.0
5.0
5.0
5.25
5.50
V CC
+0.8
V
V
V
V
DC ELECTRICAL CHARACTERISTICS
(T A : See Note 10)
(V CC = 5V ± 5% for DS1220AB)
(V CC = 5V ± 10% for DS1220AD)
PARAMETER
SYMBOL MIN TYP
MAX UNITS
NOTES
Input Leakage Current
I /O Leakage Current
CE ≥ V IH ≤ V CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE = 2.2V
Standby Current CE = V CC -0.5V
Operating Current
(Commercial)
Operating Current
(Industrial)
I IL
I IO
I OH
I OL
I CCS1
I CCS2
I CC01
I CCO1
-1.0
-1.0
-1.0
2.0
5.0
3.0
+1.0
+1.0
10.0
5.0
75
85
μ A
μ A
mA
mA
mA
mA
mA
mA
Write Protection Voltage
(DS1220AB)
Write Protection Voltage
(DS1220AD)
V TP
V TP
4.5
4.25
4.62
4.37
4.75
4.5
V
V
CAPACITANCE
(T A = +25°C)
PARAMETER
SYMBOL MIN TYP
MAX UNITS
NOTES
Input Capacitance
Input/Output Capacitance
C IN
C I/O
5
5
10
12
pF
pF
3 of 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AD-200IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-85 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1220AD-85IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1220AD-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1220Y | 制造商:Maxim Integrated Products 功能描述: |
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