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参数资料
| 型号： | DS1220Y-200IND+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16KBIT 200NS 24DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 14 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 16K (2K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 24-EDIP |
| 包装： | 管件 |
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
6. If the CE low transition occurs simultaneously with or later than the WE low transition in write
cycle 1, the output buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected t DR is defined as starting at the date of
manufacture.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage of V CC .
12. t WR1 , t DH1 are measured from WE going high.
13. t WR2 , t DH2 are measured from CE going high.
14. DS1220Y modules are recognized by Underwriters Laboratories (UL ? ) under file E99151 (R).
DC TEST CONDITIONS
Outputs open.
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART
DS1220Y-100+
DS1220Y-100IND+
TEMP RANGE
0°C to +70°C
-40°C to +85°C
SUPPLY
TOLERANCE
5V ± 10%
5V ± 10%
PIN-PACKAGE
24 / 720 EDIP
24 / 720 EDIP
+Denotes a lead(Pb)-free/RoHS-compliant package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220Y-200IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1221 | 功能描述:IC CTRLR/DECODER 4BIT 16-DIP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1221S | 功能描述:IC CTRLR/DECODER 4BIT 16-SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1221S/T&R | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS1221S/T&R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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