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参数资料
| 型号： | DS1230AB |
| 英文描述： | 256k Nonvolatile SRAM |
| 中文描述： | 256k非易失SRAM |
| 文件页数： | 10/11页 |
| 文件大小： | 214K |
| 代理商： | DS1230AB |
DS1230W
10 of 11
DS1230W NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH POWERCAP
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1230AB-150 | 256k Nonvolatile SRAM |
| DS1230AB-200 | 256k Nonvolatile SRAM |
| DS1230AB-85 | 256k Nonvolatile SRAM |
| DS1230W | Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-MSOP -40 to 125 |
| DS1230Y | Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-MSOP -40 to 125 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1230AB-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1230AB-100+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1230AB-100IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230AB-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230AB-120 | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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