参数资料
型号: DS1230YL-70
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: Static RAM
英文描述: 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
封装: POWERCAP MODULE-34
文件页数: 1/16页
文件大小: 293K
代理商: DS1230YL-70
1 of 13
083006
FEATURES
§ 10 years minimum data retention in the
absence of external power
§ Data is automatically protected during power
loss
§ Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
§ Unlimited write cycles
§ Low-power CMOS
§ Read and write access times as fast as 70 ns
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
§ Full ±10% VCC operating range (DS1230Y)
§ Optional ±5% VCC operating range
(DS1230AB)
§ Optional industrial temperature range of
-40
°C to +85°C, designated IND
§ JEDEC standard 28-pin DIP package
§ PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DS1230Y/AB
256k Nonvolatile SRAM
www.maxim-ic.com
13
1
2
3
4
5
6
7
8
9
10
11
12
14
27
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A14
A7
A5
A4
A3
A2
A1
A0
DQ1
DQ0
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ5
DQ6
28
26
25
24
23
22
21
20
19
18
17
15
16
A12
A6
DQ2
GND
DQ4
DQ3
1
NC
2
3
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
A14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34
NC
GND VBAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相关PDF资料
PDF描述
DS1243Y-120 0 TIMER(S), REAL TIME CLOCK, PDIP28
DS1243Y-150 0 TIMER(S), REAL TIME CLOCK, PDIP28
DS1243Y 0 TIMER(S), REAL TIME CLOCK, PDIP28
DS1244W-120 0 TIMER(S), REAL TIME CLOCK, PDIP28
DS1244YP-70 0 TIMER(S), REAL TIME CLOCK, DMA34
相关代理商/技术参数
参数描述
DS1230YL-70-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1230YL-85 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1230YL-85-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1230Y-P100 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230YP-100 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube