参数资料
型号: DS1236S-5/T&R
厂商: Maxim Integrated Products
文件页数: 5/19页
文件大小: 0K
描述: IC MICROMANAGER 5% 16-SOIC
标准包装: 1,000
系列: MicroManager
类型: 备用电池电路
监视电压数目: 1
输出: 开路漏极,推挽式
复位: 高有效/低有效
复位超时: 最小为 25 ms
电压 - 阀值: 4.62V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 带卷 (TR)
DS1236
DS1236 FUNCTIONAL BLOCK DIAGRAM Figure 1
If the IN pin is connected to V CCO , the NMI output will pulse low as V CC decays to V CCTP in the NMOS
mode (RC=0). In the CMOS mode (RC=V CCO ) the power-down of V CC out-of-tolerance at V CCTP will not
produce a pulse on the NMI pin. Given that any NMI pulse has been completed by the time V CC decays
to V CCTP , the NMI pin will remain high. The NMI voltage will follow V CC down until V CC decays to
V BAT . Once V CC decays to V BAT , the NMI pin will either remain at V OHL or enter tri-state mode as
determined by the RC pin (see “Reset Control” section).
MEMORY BACKUP
The DS1236 provides all of the necessary functions required to battery back a static RAM. First, a switch
is provided to direct SRAM power from the incoming 5-volt supply (V CC ) or from an external battery
(V BAT ), whichever is greater. This switched supply (V CCO ) can also be used to battery back a CMOS
microprocessor. For more information about nonvolatile processor applications, review the “Reset
Control” and “Wake Control” sections. Second, the same power-fail detection described in the power
monitor section is used to hold the chip enable output ( CEO ) to within 0.3 volts of V CC or to within 0.7
volts of V BAT . This write protection mechanism occurs as V CC falls below V CCTP as specified. If CEI is
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