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参数资料
| 型号： | DS1245AB-85 |
| 厂商： | Maxim Integrated |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 1MBIT 85NS 32DIP |
| 标准包装： | 11 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 85ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 32-EDIP |
| 包装： | 管件 |
DS1245Y/AB
POWER-DOWN/POWER-UP TIMING
(T A : See Note 10)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
MIN
TYP
MAX
1.5
UNITS
μ s
NOTES
11
V CC slew from V TP to 0V
V CC slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t F
t R
t PU
t REC
150
150
2
125
μ s
μ s
ms
ms
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DH , t DS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1245 has a built-in switch that disconnects the lithium source until the user first applies V CC .
The expected t DR is defined as accumulative time in the absence of V CC starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10. Each DS1245 has a built-in switch that disconnects the lithium source until V CC is first applied by the
user. The expected t DR is defined as accumulative time in the absence of V CC starting from the time
power is first applied by the user.
11. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 ° C to 70 ° C. For industrial products (IND), this range is -40 ° C to
+85 ° C.
12. In a power-down condition the voltage on any pin may not exceed the voltage on V CC .
8 of 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1245AB-85+ | 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1245AB-85-C01 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1245AB-85-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1245ABL-100 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1245ABL-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
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